Fast recovery diode Littelfuse IXYS DPG120C300QB with dissipation and soft reverse recovery features
Product Overview
The DPG120C300QB is a high-performance, common cathode, fast recovery diode featuring low loss and soft recovery characteristics. Designed with planar passivated chips, it offers very low leakage current, very short recovery times, and improved thermal behavior with very low Irm-values. Its soft reverse recovery minimizes EMI/RFI, while low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal for use as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and free-wheeling diode, as well as in rectifiers for switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Attributes
- Brand: IXYS
- Part Number: DPG120C300QB
- Package: TO-3P (Industry standard outline compatible with TO-247)
- Certifications: RoHS compliant, Epoxy meets UL 94V-0
- Backside: Cathode
Technical Specifications
| Symbol | Definition | Conditions | Unit | typ. | max. | min. |
|---|---|---|---|---|---|---|
| VRRM | max. repetitive reverse blocking voltage | TVJ = 25C | V | 300 | ||
| VRMS | RMS current per terminal | A | 70 | |||
| IF(AV) | average forward current | TC = 25C | A | 120 | ||
| IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; TVJ = 45C | A | 300 | ||
| IF | Forward current | TVJ = 125C, VR = 200 V | A | 60, 120 | ||
| VF0 | threshold voltage | TVJ = 175C | V | 1.40 | ||
| rF | slope resistance for power loss calculation only | TVJ = 175C | m | 5.8 | ||
| IR | reverse current, drain current | TVJ = 25C, VR = 200 V | A | 0.35 | ||
| VRSM | max. non-repetitive reverse blocking voltage | TVJ = 25C | V | 60 | ||
| Ptot | total power dissipation | TC = 25C | W | 275 | ||
| RthJC | thermal resistance junction to case | K/W | 0.55 | |||
| RthCH | thermal resistance case to heatsink | K/W | 0.3 | |||
| trr | reverse recovery time | IF = 60 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C | ns | 35 | ||
| IRM | max. reverse recovery current | IF = 60 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C | A | 9 | ||
| Qrr | reverse recovery charge | IF = 60 A; VR = 200 V; -diF/dt = 200 A/s; TVJ = 125C | C | 3.5 | ||
| CJ | junction capacitance | VR = 150 V; f = 1 MHz; TVJ = 25C | pF | 80 | ||
| TVJ | virtual junction temperature | C | 175 | -55 | ||
| Tstg | storage temperature | C | 150 | -55 | ||
| Weight | g | 5.2 | ||||
| Mounting torque | Nm | 1.2 | 0.8 | |||
| Mounting force with clip | N | 120 | 20 |
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