650V 75A Trench Field Stop IGBT Luxin-semi YGW75N65T1 Suitable for Power Electronics Applications
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Product Description
Product Overview
The YGW75N65T1 is a 650V / 75A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.
Product Attributes
- Brand: LU-Semi
- Product Code: YGW75N65T1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Breakdown Voltage | VCE | VGE=0V , IC=250uA | 650 | V |
| VGE=0V , IC=1mA | 650 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.6 - 6.2 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=75A, Tj = 25C | 1.7 | V |
| VGE=15V, IC=75A, Tj = 175C | 2.5 | V | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | 0.1 | A |
| VCE = 650V, VGE = 0V, Tj = 175C | 5000 | A | ||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 75A | 40 | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | 4500 | pF |
| Output capacitance | Coes | VCE = 25V, VGE = 0V, f = 1MHz | 200 | pF |
| Reverse transfer capacitance | Cres | VCE = 25V, VGE = 0V, f = 1MHz | 100 | pF |
| Gate charge | QG | VCC = 480V, IC = 75A, VGE = 15V | 260 | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | 350 | A |
| Turn-on Delay Time | td(on) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 110 | ns |
| Rise Time | tr | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 40 | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 660 | ns |
| Fall Time | tf | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 60 | ns |
| Turn-on Energy | Eon | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 4.3 | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C | 8.4 | mJ |
| Diode Forward Voltage | VFM | IF = 75A, Tj = 25C | 1.9 | V |
| Reverse Recovery Time | Trr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 50 | ns |
| Reverse Recovery Current | Irr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 12 | A |
| Reverse Recovery Charge | Qrr | IF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C | 350 | nC |
| IGBT thermal resistance, junction - case | R(j-c) | 0.3 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| DC collector current | IC | TC = 25C | 150 | A |
| DC collector current | IC | TC = 100C | 75 | A |
| Diode Forward current | IF | TC = 25C | 150 | A |
| Diode Forward current | IF | TC = 100C | 75 | A |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Power dissipation | Ptot | Tj=25C | 500 | W |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+175 | C |
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