NPN Silicon Transistor LRC L2SC1623SWT1G with 150 Milliwatt Power Dissipation and 270 to 560 DC Current Gain Range
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Product Description
Product Overview
The L2SC1623SWT1G and L2SC1623SWT3G are NPN Silicon General Purpose Transistors manufactured by Leshan Radio Company, LTD. These devices are designed for general-purpose applications and comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Origin: China
- Material: Silicon
- Certifications: RoHS, Halogen Free
Technical Specifications
| Part Number | Description | EmitterBase Voltage (VEBO) | Collector Current (IC) | CollectorEmitter Voltage (VCEO) | CollectorBase Voltage (VCBO) | Total Device Dissipation (PD) | Thermal Resistance (RJA) | Junction and Storage Temperature (TJ, Tstg) | DC Current Gain (HFE) | CollectorEmitter Saturation Voltage (VCE(sat)) | BaseEmitter Saturation Voltage (VBE(sat)) | Base -Emitter On Voltage (VBE(on)) | CurrentGain Bandwidth Product (fT) | Output Capacitance (Cobo) | Shipping |
| L2SC1623SWT1G | General Purpose Transistor, NPN Silicon, SC70(SOT-323) | 7 V | 150 mA | 50 V | 60 V | 150 mW @ 25C | 833 C/W | 55+150 C | 270 - 560 | 0.15 V (Typ.), 0.3 V (Max.) | 0.86 V (Typ.), 1.0 V (Max.) | 0.55 V (Min.), 0.65 V (Max.) | 250 MHz (Typ.) | 3 pF (Typ.) | 3000/Tape&Reel |
| L2SC1623SWT3G | General Purpose Transistor, NPN Silicon, SC70(SOT-323) | 7 V | 150 mA | 50 V | 60 V | 150 mW @ 25C | 833 C/W | 55+150 C | 270 - 560 | 0.15 V (Typ.), 0.3 V (Max.) | 0.86 V (Typ.), 1.0 V (Max.) | 0.55 V (Min.), 0.65 V (Max.) | 250 MHz (Typ.) | 3 pF (Typ.) | 10000/Tape&Reel |
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