NPN Silicon Transistor with Monolithic Bias Resistor Network LRC LDTC123JET1G Surface Mount Package RoHS Compliant
Product Overview
The LDTC123JET1G and S-LDTC123JET1G are NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. These devices simplify circuit design, reduce board space, and lower component count. The S-prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements. The materials comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model Numbers: LDTC123JET1G, S-LDTC123JET1G
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 (for S-prefix variants)
- Manufacturing Capability: PPAP capable (for S-prefix variants)
- Package Type: SC89
- Transistor Type: NPN Silicon
- Configuration: Surface Mount Transistor with Monolithic Bias Resistor Network
- Shipping: 3000/Tape&Reel
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes | |
|---|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C) | |||||||
| Collector Current Continuous | IC | - | - | 100 | mA | ||
| CollectorEmitter Voltage | VCEO | - | - | 50 | V | ||
| CollectorBase Voltage | VCBO | - | - | 50 | V | ||
| Total Device Dissipation, FR5 Board | PD | - | 1.6 | - | mW | @ TA = 25C (Note 1) | |
| Derate above 25C | - | 600 | - | mW/C | |||
| JunctiontoAmbient Thermal Resistance | RJA | - | - | - | C/W | (Note 1) | |
| Junction and Storage Temperature | TJ, Tstg | -55 | - | +150 | C | ||
| Electrical Characteristics (Ta= 25C) | |||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 50 | - | - | V | (IC = 2.0 mA, IB = 0) | |
| CollectorBase Breakdown Voltage | VBR(CBO) | 50 | - | - | V | (IC = 10 A, IE = 0) | |
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA | (VCB = 50 V, IE = 0) | |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA | (VCE = 50 V, IB = 0) | |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | A | (VEB = 6.0 V, IC = 0) | |
| DC Current Gain | HFE | 80 | - | 140 | (IC = 5.0 mA, VCE = 10 V) (Note 2.) | ||
| CollectorEmitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V | (IC = 10 mA, IB = 0.3 mA) (Note 2.) | |
| Input Resistor | R1 | 1.54 | 2.2 | 2.86 | K | ||
| Resistor Ratio | R1/R2 | 0.038 | 0.047 | 0.056 | |||
| On-State Input Voltage | VI(on) | - | - | 1.1 | V | ||
| Off-State Input Voltage | VI(off) | - | - | 0.5 | V | (VCE=5V, IC=0.1mA) | |
| Output Voltage (on) | VOL | - | - | 0.2 | V | (VCC = 5.0 V, VB = 2.5 V, RL =1.0K) | |
| Output Voltage (on) | VOH | - | - | 0.2 | V | (VCC = 5.0 V, VB = 0.5 V, RL =1.0K) | |
| Device Marking and Resistor Values | |||||||
| Device Marking | LDTC123JET1G | ||||||
| Bias Resistor Network | R1(K) | 2.2 | |||||
| Bias Resistor Network | R2(K) | 47 | |||||
| Outline and Dimensions | |||||||
| Dimension | A | 1.50 | 1.60 | 1.70 | mm | (0.059) | |
| Dimension | B | 0.75 | 0.85 | 0.95 | mm | (0.030-0.040) | |
| Dimension | C | 0.23 | 0.28 | 0.33 | mm | (0.009-0.013) | |
| Dimension | D | 0.60 | 0.70 | 0.80 | mm | (0.024-0.031) | |
| Dimension | G | 0.50 | - | - | mm | BSC (0.020) | |
| Dimension | H | - | - | - | mm | (0.063 REF) | |
| Dimension | J | 0.10 | 0.15 | 0.20 | mm | (0.004-0.008) | |
| Dimension | K | 0.30 | 0.40 | 0.50 | mm | (0.012-0.020) | |
| Dimension | L | 1.50 | 1.60 | 1.70 | mm | (0.059-0.067) | |
| Dimension | M | - | - | - | mm | (0.021 REF) | |
| Dimension | S | 1.10 | - | - | mm | REF (0.043) | |
Note 1: FR5 @ Minimum Pad.
Note 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Disclaimer: All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products, please confirm the latest information with a LRC sales representative.
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