High Reliability Fast Recovery Diode Littelfuse IXYS DSEI120-12A for Ultrasonic Cleaner Applications
Product Overview
The IXYS DSEI120-12A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a planar passivated chip with very short recovery times, extremely low switching losses, and low peak reverse current (IRM) values, exhibiting soft recovery behavior. This diode is suitable for use as an antiparallel diode in high-frequency switching devices, anti-saturation diode, snubber diode, and free-wheeling diode in converters and motor control circuits. It also serves as a rectifier in switch mode power supplies (SMPS), inductive heating and melting, uninterruptible power supplies (UPS), and ultrasonic cleaners and welders. Advantages include high reliability circuit operation, reduced protection circuits due to low voltage peaks, low noise switching, and low losses, enabling operation at lower temperatures or space savings through reduced cooling.
Product Attributes
- Brand: IXYS
- Package: International standard JEDEC TO-247 AD
- Chip Technology: Planar passivated
- Recovery Behavior: Soft recovery
- Certifications: Epoxy meets UL 94V-0
Technical Specifications
| Symbol | Conditions | Characteristic | Values (typ.) | Values (max.) | Units |
|---|---|---|---|---|---|
| IR | VR = VRRM, TVJ = 25C | 3 | mA | ||
| IR | VR = 0.8VRRM, TVJ = 25C | 1.5 | mA | ||
| IR | VR = 0.8VRRM, TVJ = 125C | 20 | mA | ||
| VF | IF = 70 A, TVJ = 150C | 1.55 | 1.8 | V | |
| VT0 | for power-loss calculations only | 1.2 | V | ||
| rT | TVJ = TVJM | 4.6 | m | ||
| RthJC | 0.25 | K/W | |||
| RthCH | 0.35 | K/W | |||
| RthJA (version A) | 35 | K/W | |||
| trr | IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C | 40 | 60 | ns | |
| IRM | VR = 350 V; IF = 75 A; -diF/dt = 200 A/s; L < 0.05 H; TVJ = 100C | Chip capability, limited to 70 A by leads | 25 | 30 | A |
| IFAVM | Data according to IEC 60747 | 109 | A | ||
| VRRM | 1200 | V | |||
| trr | 40 | ns | |||
| IFRMS | TC = 60C; rectangular, d = 0.5 | 200 | A | ||
| IFAVM | TC = 95C; rectangular, d = 0.5 | 109 | A | ||
| IFAV | d limited to 70 A by leads | 75 | A | ||
| IFRM | tP < 10 s; rep. rating, pulse width limited by TVJM | 1200 | A | ||
| IFSM | TVJ = 45C; t = 10 ms (50 Hz), sine | 600 | A | ||
| IFSM | t = 8.3 ms (60 Hz), sine | 660 | A | ||
| IFSM | TVJ = 150C; t = 10 ms (50 Hz), sine | 540 | A | ||
| IFSM | t = 8.3 ms (60 Hz), sine | 600 | A | ||
| I2t | TVJ = 45C; t = 10 ms (50 Hz), sine | 1800 | A2s | ||
| I2t | t = 8.3 ms (60 Hz), sine | 1800 | A2s | ||
| I2t | TVJ = 150C; t = 10 ms (50 Hz), sine | 1450 | A2s | ||
| I2t | t = 8.3 ms (60 Hz), sine | 1500 | A2s | ||
| TVJ | Operating temperature | -40 | 150 | C | |
| TVJM | Peak junction temperature | 150 | C | ||
| Tstg | Storage temperature | -40 | 150 | C | |
| Ptot | TC = 25C | Total power dissipation | 357 | W | |
| Md | mounting torque | 0.8 | 1.2 | Nm | |
| Weight | typical | 6 | g | ||
| VRSM | Peak repetitive reverse voltage | 1200 | V | ||
| VRRM | Peak repetitive reverse voltage | 1200 | V | ||
| Type | DSEI120-12A |
Dimensions (TO-247 AD)
| Sym. | Inches | Millimeter | ||
|---|---|---|---|---|
| min. | max. | min. | max. | |
| A | 0.185 | 0.209 | 4.70 | 5.30 |
| A1 | 0.087 | 0.102 | 2.21 | 2.59 |
| A2 | 0.059 | 0.098 | 1.50 | 2.49 |
| D | 0.819 | 0.845 | 20.79 | 21.45 |
| E | 0.610 | 0.640 | 15.48 | 16.24 |
| E2 | 0.170 | 0.216 | 4.31 | 5.48 |
| e | 0.430 BSC | 10.92 BSC | ||
| L | 0.780 | 0.800 | 19.80 | 20.30 |
| L1 | - | 0.177 | - | 4.49 |
| P | 0.140 | 0.144 | 3.55 | 3.65 |
| Q | 0.212 | 0.244 | 5.38 | 6.19 |
| S | 0.242 BSC | 6.14 BSC | ||
| b | 0.039 | 0.055 | 0.99 | 1.40 |
| b2 | 0.065 | 0.094 | 1.65 | 2.39 |
| b4 | 0.102 | 0.135 | 2.59 | 3.43 |
| c | 0.015 | 0.035 | 0.38 | 0.89 |
| D1 | 0.515 | - | 13.07 | - |
| D2 | 0.020 | 0.053 | 0.51 | 1.35 |
| E1 | 0.530 | - | 13.45 | - |
| P1 | - | 0.29 | - | 7.39 |
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