Epitaxial planar NPN transistor LRC LMBTA44LT1G with 400 volt breakdown voltage and RoHS compliant materials

Name: Epitaxial planar NPN transistor LRC LMBTA44LT1G with 400 volt breakdown voltage and RoHS compliant materials
Brand: Hefei Purple Horn E-Commerce Co., Ltd.

Price Negotiable

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Product Description

Product Overview

The LMBTA44LT1G is an NPN epitaxial planar transistor designed for applications requiring high voltage. It is complementary to the LMBTA94LT1G.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material Compliance: RoHS requirements
Device Marking: 3D
Automotive/Specialty Prefix: S- (for S-LMBTA44LT1G), AEC-Q101 Qualified and PPAP Capable

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	Ic= 100A, IE=0	400			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1mA , IB=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0			5	V
Collector cut-off current	ICBO	VCB=400V, IE=0			0.1	A
Collector cut-off current	ICEO	VCE=350V			5	A
Emitter cut-off current	IEBO	VEB= 4V, IC=0			0.1	A
DC current gain	HFE(1)	VCE=10V, IC=10 mA	80		300
DC current gain	HFE(2)	VCE=10V, IC=1mA	50
DC current gain	HFE(3)	VCE=10V, IC=50 mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=10 mA, IB=1mA			0.2	V
Collector-emitter saturation voltage	VCE(sat)	IC=50 mA, IB=5mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=10 mA, IB= 1 mA			0.9	V
Transition frequency	f T	VCE=10V, IC=20mA			50	MHz
Storage Temperature			-55		+150	C
Junction Temperature					+150	C
Total Power Dissipation		(Ta=25C)			350	mW
Collector to Base Voltage	VCBO				400	V
Collector to Emitter Voltage	VCEO				400	V
Emitter to Base Voltage	VEBO				5	V
Collector Current	IC				200	mA