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Low noise PNP silicon transistor LRC LMBT5087LT1G in SOT23 package for general purpose applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The LMBT5087LT1G is a low-noise PNP silicon transistor in a SOT-23 (TO-236AB) package. It is designed for general-purpose applications requiring low noise characteristics.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Device Marking: 2Q
  • Certifications: RoHS compliant

Technical Specifications

CharacteristicSymbolValueUnitNotes
Maximum RatingsV CEO 50Vdc
V CBO 50Vdc
V EBO 3.0Vdc
Collector Current ContinuousI C 50mAdc
Total Device DissipationP D225mWRF-5 Board, T A =25 C
Derate above 25C1.8mW/C
Thermal Resistance, Junction to AmbientR JA556C/WRF-5 Board
R JA417C/WAlumina Substrate
Junction and Storage TemperatureT J , T stg55 to +150C
OFF CHARACTERISTICS
CollectorEmitter Breakdown VoltageV (BR)CEO 50Vdc(I C = 1.0 mAdc, I B = 0)
CollectorBase Breakdown VoltageV (BR)CBO 50Vdc(I C = 100 Adc, I E = 0)
Collector Cutoff CurrentI CBO10nAdc(V CB = 10 Vdc, I E= 0)
I CBO50nAdc(V CB = 35 Vdc, I E= 0)
ON CHARACTERISTICS
DC Current Gainh FE250 800(I C = 100Adc, V CE = 5.0 Vdc)
h FE250 (I C = 1.0 mAdc, V CE = 5.0 Vdc)
h FE250 (I C = 10 mAdc, V CE = 5.0 Vdc)
CollectorEmitter Saturation VoltageV CE(sat) 0.3Vdc(I C = 10 mAdc, I B = 1.0 mAdc)
BaseEmitter Saturation VoltageV BE(sat) 0.85Vdc(I C = 10 mAdc, I B = 1.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Productf T40MHz(I C = 500 Adc, V CE= 5.0 Vdc, f = 20 MHz)
Output CapacitanceC obo4.0pF(V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz)
SmallSignal Current Gainh fe250 900(I C= 1.0mAdc, V CE = 5.0Vdc, f = 1.0 kHz)
Noise FigureN F2.0dB(I C = 20 mAdc, V CE= 5.0 Vdc,Rs=10k, f = 1.0 kHz)
N F2.0dB(I C = 100Adc, V CE= 5.0 Vdc,Rs=3.0k, f = 1.0 kHz)

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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