NPN Silicon Transistor LRC LBC847AWT1G Designed for Electronic Amplification and Switching Solutions

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Product Description

LESHAN RADIO COMPANY, LTD. - General Purpose NPN Silicon Transistors

This document details the specifications for LESHAN RADIO COMPANY, LTD.'s general-purpose NPN silicon transistors, including the BC846, BC847, and BC848 series. These transistors are designed for a wide range of electronic applications requiring reliable amplification and switching capabilities.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: RoHS compliant, AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix devices)

Technical Specifications

Model	Collector-Emitter Voltage (V CEO)	Collector-Base Voltage (V CBO)	Emitter-Base Voltage (V EBO)	Collector Current - Continuous (I C)	Total Device Dissipation (P D)	Thermal Resistance, Junction to Ambient (R JA)	Junction and Storage Temperature (T J, T stg)	Collector Cutoff Current (I CBO)	DC Current Gain (hFE)	Collector-Emitter Saturation Voltage (V CE(sat))	Base-Emitter Saturation Voltage (V BE(sat))	Base-Emitter Voltage (V BE(on))	Current-Gain Bandwidth Product (f T)	Output Capacitance (C obo)	Noise Figure (NF)
BC846	65 V	80 V	6.0 V	100 mAdc	150 mW	833 C/W	55 to +150 C	15 nA (VCB = 30 V)	110-180 (IC=2.0mA, VCE=5V)	0.25 V (IC=10mA, IB=0.5mA)	0.7 V (IC=10mA, IB=0.5mA)	580-700 mV (IC=2.0mA, VCE=5V)	100 MHz (IC=10mA, VCE=5V, f=100MHz)	4.5 pF (VCB=10V, f=1.0MHz)	4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
BC847	45 V	50 V	6.0 V	100 mAdc	150 mW	833 C/W	55 to +150 C	15 nA (VCB = 30 V)	220-450 (IC=2.0mA, VCE=5V)	0.25 V (IC=10mA, IB=0.5mA)	0.7 V (IC=10mA, IB=0.5mA)	660-770 mV (IC=2.0mA, VCE=5V)	100 MHz (IC=10mA, VCE=5V, f=100MHz)	4.5 pF (VCB=10V, f=1.0MHz)	4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
BC848	30 V	30 V	5.0 V	100 mAdc	150 mW	833 C/W	55 to +150 C	15 nA (VCB = 30 V)	420-800 (IC=2.0mA, VCE=5V)	0.25 V (IC=10mA, IB=0.5mA)	0.7 V (IC=10mA, IB=0.5mA)	700 mV (IC=2.0mA, VCE=5V)	100 MHz (IC=10mA, VCE=5V, f=100MHz)	4.5 pF (VCB=10V, f=1.0MHz)	4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
S-BC846	65 V	80 V	6.0 V	100 mAdc	150 mW	833 C/W	55 to +150 C	15 nA (VCB = 30 V)	110-180 (IC=2.0mA, VCE=5V)	0.25 V (IC=10mA, IB=0.5mA)	0.7 V (IC=10mA, IB=0.5mA)	580-700 mV (IC=2.0mA, VCE=5V)	100 MHz (IC=10mA, VCE=5V, f=100MHz)	4.5 pF (VCB=10V, f=1.0MHz)	4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
S-BC847	45 V	50 V	6.0 V	100 mAdc	150 mW	833 C/W	55 to +150 C	15 nA (VCB = 30 V)	220-450 (IC=2.0mA, VCE=5V)	0.25 V (IC=10mA, IB=0.5mA)	0.7 V (IC=10mA, IB=0.5mA)	660-770 mV (IC=2.0mA, VCE=5V)	100 MHz (IC=10mA, VCE=5V, f=100MHz)	4.5 pF (VCB=10V, f=1.0MHz)	4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
S-BC848	30 V	30 V	5.0 V	100 mAdc	150 mW	833 C/W	55 to +150 C	15 nA (VCB = 30 V)	420-800 (IC=2.0mA, VCE=5V)	0.25 V (IC=10mA, IB=0.5mA)	0.7 V (IC=10mA, IB=0.5mA)	700 mV (IC=2.0mA, VCE=5V)	100 MHz (IC=10mA, VCE=5V, f=100MHz)	4.5 pF (VCB=10V, f=1.0MHz)	4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)

Device Marking: LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;

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