NPN Silicon Transistor LRC LMBT3904N3T5G Suitable for Various Applications Featuring RoHS Compliance

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Product Description

Product Overview

The LMBT3904N3T5G and S-LMBT3904N3T5G are NPN silicon general purpose transistors designed for a wide range of applications. The S-prefix variant is specifically tailored for automotive and other applications requiring unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These transistors are RoHS compliant and Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material: Silicon
Certifications: RoHS, Halogen Free, AEC-Q101 (S-prefix only)

Technical Specifications

Parameter	Symbol	LMBT3904N3T5G	S-LMBT3904N3T5G	Unit	Min.	Typ.	Max.
MAXIMUM RATINGS
CollectorEmitter Voltage	VCEO	40	40	V
CollectorBase Voltage	VCBO	60	60	V
EmitterBase Voltage	VEBO	6	6	V
Collector Current Continuous	IC	200	200	mA
Total Device Dissipation, FR5 Board	PD	250	250	mW
Derate above 25C		2	2	mW/C
JunctiontoAmbient Thermal Resistance	RJA	500	500	C/W
Junction and Storage temperature	TJ,Tstg	-55+150	-55+150	C
ELECTRICAL CHARACTERISTICS
CollectorEmitter Breakdown Voltage	VBR(CEO)	40	40	V
CollectorBase Breakdown Voltage	VBR(CBO)	60	60	V
EmitterBase Breakdown Voltage	VBR(EBO)	6	6	V
Collector Cutoff Current	ICEX			nA			50
Base Cutoff Current	IBL			nA			50
DC Current Gain	HFE	40				70
		100				300
CollectorEmitter Saturation Voltage	VCE(sat)			V		0.2	0.65
						0.3	0.85
BaseEmitter Saturation Voltage	VBE(sat)			V		0.65	0.95
CurrentGain Bandwidth Product	fT	300	300	MHz
Output Capacitance	Cobo			pF		4
Input Capacitance	Cibo			pF		8
SWITCHING CHARACTERISTICS
Delay Time	td			ns			35
Rise Time	tr			ns			35
Storage Time	ts			ns			200
Fall Time	tf			ns			50