Soft recovery epitaxial diode Littelfuse IXYS DSEP30-12AR ideal for snubber and freewheeling applications
Product Overview
The DSEP 30-12A and DSEP 30-12AR are HiPerFRED Epitaxial Diodes with soft recovery, designed for high-frequency switching applications. These diodes feature a planar passivated chip, very short recovery time, extremely low switching losses, and low IRM values, contributing to soft recovery behavior. They are ideal for use as antiparallel diodes for high-frequency switching devices, antisaturation diodes, snubber diodes, and free-wheeling diodes in converters and motor control circuits. Their avalanche voltage rating ensures reliable operation, and the soft reverse recovery minimizes EMI/RFI. The epoxy meets UL 94V-0 standards, with Version AR being isolated and UL registered.
Product Attributes
- Brand: IXYS
- Features: HiPerFRED Epitaxial Diode with soft recovery
- Chip: Planar passivated
- Recovery: Very short, soft
- Material: Epoxy meets UL 94V-0
- Certifications: UL registered (Version AR)
- Package: International standard package (TO-247 AD ISOPLUS 247TM)
Technical Specifications
| Model | VRRM (V) | IFAV (A) | trr (ns) | IFRMS (A) | IFAVM (A) | IFSM (A) | EAS (mJ) | IAS (A) | IAR (A) | TVJ (C) | TVJM (C) | Tstg (C) | Ptot (W) | Md (Nm) | FC (N) | VISOL (V~) | Weight (g) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DSEP 30-12A | 1200 | 30 | 40 | 70 | 30 (TC = 115C) | 200 (tp = 10 ms, sine) | 14 (non-repetitive) | 11.5 (L = 180 H) | 1.2 (repetitive) | -55...+175 | 175 | -55...+150 | 165 (TC = 25C) | 0.8...1.2 (*) | 20...120 (with clip) | - | 6 (typical) |
| DSEP 30-12AR | 1200 | 30 | 40 | 70 | 30 (TC = 110C) | 200 (tp = 10 ms, sine) | 14 (non-repetitive) | 11.5 (L = 180 H) | 1.2 (repetitive) | -55...+175 | 175 | -55...+150 | 165 (TC = 25C) | - | - | 2500 (**) | 6 (typical) |
| Symbol | Conditions | Characteristic Values (typ.) | Characteristic Values (max.) | Unit |
|---|---|---|---|---|
| IR | TVJ = 25C; VR = VRRM | 250 | - | A |
| IR | TVJ = 150C;VR = VRRM | - | 1 | mA |
| VF | IF = 30 A; TVJ = 150C | 1.79 | - | V |
| VF | TVJ = 25C | 2.74 | - | V |
| RthJC | Version A | 0.9 | - | K/W |
| RthJC | Version AR | 1.1 | - | K/W |
| RthCH | - | 0.25 | - | K/W |
| trr | IF = 1 A; -di/dt = 200 A/s; VR = 30 V; TVJ = 25C | 40 | - | ns |
| IRM | VR = 100 V; IF = 50 A; -diF/dt = 100 A/s | 8.5 | 11.4 | A |
Applications:
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode in converters and motor control circuits
- Rectifiers in switch mode power supplies (SMPS)
- Inductive heating
- Uninterruptible power supplies (UPS)
- Ultrasonic cleaners and welders
Advantages:
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low IRM reduces: Power dissipation within the diode, Turn-on loss in the commutating switch
(*) Version A only; (**) Version AR only. Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0%; Pulse Width = 300 s, Duty Cycle < 2.0%. Data according to IEC 60747 and per diode unless otherwise specified.
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