Low Collector Emitter Saturation Voltage NPN Transistor LRC LBSS4240LT1G with SOT23 Plastic Package

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The LESHAN RADIO COMPANY, LTD. LBSS4240LT1G is an NPN silicon transistor designed for general-purpose applications. It features a low collector-emitter saturation voltage (VCE(sat)), high current capability, and improved reliability due to reduced heat generation. This transistor is suitable as a replacement for standard SOT89/SOT223 packaged transistors and is available in a SOT23 plastic package. Its PNP complement is the LBSS5240LT1G.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material Compliance: RoHS requirements
Automotive & Special Applications: S-Prefix for AEC-Q101 Qualified and PPAP Capable applications.

Technical Specifications

Symbol	Parameter	Conditions	Value	Unit
V CEO	CollectorEmitter Voltage		40	V
V CBO	CollectorBase Voltage		40	V
V EBO	EmitterBase Voltage		5.0	V
I C	Collector Current Continuous		2	A
P D	Total Power Dissipation		0.3	W
T j	Junction temperature		150	C
T stg	Storage temperature		-65 ~+150	C
Rth(j-a)	Thermal resistance from junction to ambient	in free air; note 1	417	K/W
Rth(j-a)	Thermal resistance from junction to ambient	in free air; note 2	260	K/W
I CFO	Collector-base cut-off current	IE = 0; VCB = 30 V	-	100 nA
I EBO	Emitter-base cut-off current	IC = 0; VEB = 4 V	-	100 nA
hFE	DC current gain	IC = 100 mA; VCE = 2 V	350	-
		IC = 500 mA; VCE = 2 V	300	-
		IC = 1 A; VCE = 2 V	300	-
		IC = 2 A; VCE = 2 V	150	-
V CEsat	Collector-emitter saturation voltage	IC = 100 mA; IB = 1 mA	-	70 mV
		IC = 500 mA; IB = 50 mA	-	100 mV
		IC = 750 mA; IB = 15 mA	-	180 mV
		IC = 1 A; IB = 50 mA; note 1	-	180 mV
		IC = 2 A; IB = 200 mA; note 1	-	320 mV
V BEsat	Base-emitter saturation voltage	IC = 2 A; IB = 200 mA; note 1	-	1.1 V
V BEon	Base-emitter turn on voltage	IC = 100 mA; VCE = 2 V	-	0.75 V
C C	Collector capacitance	IE = Ie = 0; VCB = 10 V; f = 1 MHz	-	20 pF
f T	Transition frequency	IC = 100 mA; VCE = 10 V; f = 100 MHz	100	MHz