General purpose NPN transistor LRC L9014RLT1G with RoHS compliance and 5V emitter base voltage rating

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Product Description

Product Overview

The L9014QLT1G is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014. This transistor is suitable for various electronic applications requiring reliable performance.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix series)
RoHS Compliance: Declared

Technical Specifications

Symbol	Characteristic	Value	Unit	Notes
VCEO	Collector-Emitter Voltage	45	V
VCBO	Collector-Base Voltage	50	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	100	mA
PD	Total Device Dissipation (FR-5 Board)	225	mW	TA=25C, Derate above 25C: 1.8 mW/C
PD	Total Device Dissipation (Alumina Substrate)	300	mW	TA=25C, Derate above 25C: 2.4 mW/C
RJA	Thermal Resistance, Junction to Ambient (FR-5 Board)	556	C/W
RJA	Thermal Resistance, Junction to Ambient (Alumina Substrate)	417	C/W
TJ, Tstg	Junction and Storage Temperature	-55 to +150	C
V(BR)CEO	Collector-Emitter Breakdown Voltage	45	V	IC=1.0mA
V(BR)EBO	Emitter-Base Breakdown Voltage	5	V	IE=100A
V(BR)CBO	Collector-Base Breakdown Voltage	50	V	IC=100A
ICBO	Collector Cutoff Current	100	nA	VCB=40V
IEBO	Emitter Cutoff Current	100	nA	VEB=3V
HFE	DC Current Gain	150 - 1000		IC=1mA, VCE=5V
VCE(sat)	Collector-Emitter Saturation Voltage	-	0.3	V	IC=100mA, IB=5mA