General purpose PNP transistor LRC LBC857BWT1G silicon device with AEC Q101 and PPAP certification

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Product Description

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon

These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/ SC70 which is designed for low power surface mount applications. AEC-Q101 Qualified and PPAP Capable.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: Silicon
Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS compliant
Package: SOT323 / SC-70

Technical Specifications

Characteristic	Symbol	BC856	BC857	BC858	Unit
MAXIMUM RATINGS
CollectorEmitter Voltage	V CEO	65	45	30	V
CollectorBase Voltage	V CBO	80	50	30	V
EmitterBase Voltage	V EBO	5.0	5.0	5.0	V
Collector Current Continuous	I C	100	100	100	mAdc
Total Device Dissipation FR 5 Board, (1) TA = 25C	P D	150			mW
Thermal Resistance, Junction to Ambient	R JA	833			C/W
Junction and Storage Temperature	T J , T stg	55 to +150			C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mA)	V (BR)CEO	65	45	30	v
CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0)	V (BR)CES	80	50	30	v
CollectorBase Breakdown Voltage (IC = 10 A)	V (BR)CBO	80	50	30	v
EmitterBase Breakdown Voltage (IE = 1.0 A)	V (BR)EBO	5.0	5.0	5.0	v
Collector Cutoff Current (VCB = 30 V)	I CBO	15			nA
Collector Cutoff Current (VCB = 30 V, TA = 150C)	I CBO	4.0			A
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, V CE = 5.0 V)	h FE	125 250	220 475	420 800
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	V CE(sat)	0.3			V
CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	V CE(sat)	0.65			V
BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	V BE(sat)	0.7	0.7	0.7	V
BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	V BE(sat)	0.9	0.9	0.9	V
BaseEmitter Voltage (IC = 2.0 mA, V CE = 5.0 V)	V BE(on)	0.6 0.75	0.6 0.75	0.6 0.75	V
BaseEmitter Voltage (IC = 10 mA, V CE = 5.0 V)	V BE(on)	0.82	0.82	0.82	V
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)	f T	100	100	100	MHz
Output Capacitance (V CB = 10 V, f = 1.0 MHz)	Cob	4.5			pF
Noise Figure (IC= 0.2 mA,V CE= 5.0 Vdc, RS= 2.0 k, f =1.0 kHz, BW= 200 Hz)	NF	10			dB