high voltage MOSFET MASPOWER MS2N350HGC0 optimized for capacitor discharge pulse circuits and X-ray generation

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Product Description

Product Overview

The MS2N350HGC0 H1.02 from Maspower is a high-speed switching power MOSFET designed for demanding high-voltage applications. It features a fast intrinsic diode, minimized gate charge, and very low intrinsic capacitances, enabling efficient and rapid switching. This MOSFET is ideal for high voltage power supplies, capacitor discharge applications, pulse circuits, and laser and X-ray generation systems.

Product Attributes

Brand: Maspower
Model: MS2N350HGC0 H1.02

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Electrical ratings
Drain-source voltage (VGS = 0)	VDS				3500	V
Gate- source voltage	VGS			±30		V
Drain current (continuous) at TC = 25 C	ID				2	A
Drain current (continuous) at TC = 100 C	ID				1.6	A
Drain current (pulsed)	IDM				6	A
Total dissipation at TC = 25 C	PD				463	W
Avalanche Current	IAR				1.3	A
Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V,L=20mH)	EAS			16.9		mJ
Operating junction temperature	TJ		-55	~	150
Storage temperature	Tstg		-55	~	150
Maximum lead temperature for soldering purpose	TL				300
Mounting Torque	Md				1.13	Nm
Weight	G				6	g
Electrical Characteristics (Tvj = 25C unless otherwise specified)
Drain-source breakdown voltage	V(BR)DSS	ID = 250 A, VGS = 0	3500			V
Zero gate voltage drain current (VGS = 0)	IDSS	VDS = Max rating			100	A
Zero gate voltage drain current (VGS = 0)	IDSS	VDS=Max rating, TC=125 C			1000	A
Gate-body leakage current (VDS = 0)	IGSS	VGS = ± 30 V			±200	nA
Gate threshold voltage	VGS(th)	VDS = VGS, ID = 250 A	3.5		5.5	V
Static drain-source on resistance	RDS(on)	VGS = 10V, ID = 2A		19	25
Dynamic
Forward transconductance	gfs	VDS = 50 V, ID = 2A	1.2		2.7	S
Input capacitance	Ciss	VDS=25V,f=1MHz,VGS=0			3540	pF
Output capacitance	Coss
Reverse transfer capacitance	Crss
Total gate charge	Qg	VDD=1750V,ID=2A VGS=10V			94	nC
Gate-source charge	Qgs
Gate-drain charge	Qgd
Switching times
Turn-on delay time	td(on)	Resistive load VDD = 1750 V, ID =2A, VGS = 10 V, RG = 5(External)				ns
Rise time	tr
Turn-off-delay time	td(off)
Fall time	tf
Source drain diode
Source-drain current	ISD				4	A
Source-drain current (pulsed)	ISDM				12	A
Forward on voltage	VSD	ISD= 1A, VGS= 0	0.9		1.5	V
Reverse recovery time	trr	ISD=2A, -di/dt=100A/s VDD= 1750V			620	ns
Reverse recovery charge	Qrr	ISD=2A, -di/dt=100A/s VDD= 1750V			620	ns
Reverse recovery current	IRRM	ISD=2A, -di/dt=100A/s VDD= 1750V			1.1	A
Reverse recovery time	trr	ISD=2A, di/dt=100A/s VDD= 1750 V TJ=125C			880	ns
Reverse recovery charge	Qrr	ISD=2A, di/dt=100A/s VDD= 1750 V TJ=125C			880	ns
Reverse recovery current	IRRM	ISD=2A, di/dt=100A/s VDD= 1750 V TJ=125C			1.3	A
Thermal data
Thermal resistance junction-case max	Rthj-case				0.27	W/
Thermal resistance junction-ambient max	Rthj-amb				50