Silicon PNP Driver Transistor LRC LMBTA55LT1G SOT23 Package Ideal for Electronic Driver Functions

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The LMBTA55 and LMBTA56 are PNP silicon driver transistors in a SOT-23 (TO-236AB) package. These transistors are designed for general-purpose applications requiring driver functionality.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Package Type: SOT-23 (TO-236AB)
Material: Silicon PNP
Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)
RoHS Compliance: Declared

Technical Specifications

Characteristic	Symbol	LMBTA55	LMBTA56	Unit	Conditions
MAXIMUM RATINGS	V CEO	-60	-80	Vdc
	V CBO	-60	-80	Vdc
	V EBO	-4.0	-4.0	Vdc
	I C (Continuous)	-500	-500	mAdc
	T J , T stg	-55 to +150	-55 to +150	C	Junction and Storage Temperature
THERMAL CHARACTERISTICS (FR-5 Board)	P D	225	225	mW	TA = 25C
	Derate above 25C	1.8	1.8	mW/C
	R JA	556	556	C/W
	Total Device Dissipation (Alumina Substrate)	300	300	mW	TA = 25C
ELECTRICAL CHARACTERISTICS	V (BR)CEO	-60	-80	Vdc	I C = -1.0 mAdc, I B= 0
ELECTRICAL CHARACTERISTICS	V (BR)EBO	-4.0	-4.0	Vdc	I E = -100 Adc, I C = 0
OFF CHARACTERISTICS	I CES	-0.1	-0.1	Adc	V CE = -60Vdc, I B = 0
OFF CHARACTERISTICS	I CBO	-0.1	-0.1	Adc	V CB = -60Vdc, I E= 0 (LMBTA55); V CB = -80Vdc, I E= 0 (LMBTA56)
ON CHARACTERISTICS	h FE	100	100		I C = -10 mAdc, V CE = -1.0 Vdc
ON CHARACTERISTICS	h FE	100	100		I C = -100mAdc, V CE = -1.0 Vdc
ON CHARACTERISTICS	VCE(sat)	-0.25	-0.25	Vdc	I C = -100mAdc, I B = -10mAdc
ON CHARACTERISTICS	V BE(on)	-1.2	-1.2	Vdc	I C = -100mAdc, V CE = -1.0Vdc
SMALL-SIGNAL CHARACTERISTICS	f T	50	50	MHz	V CE = -1.0 Vdc, I C = -100mAdc, f = 100 MHz