PNP Silicon Transistor LRC L8550PLT1G General Purpose Component for Electronic Circuit Applications

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Product Description

Product Overview

General Purpose PNP Silicon Transistors designed for various applications. These transistors offer reliable performance with specific electrical and thermal characteristics suitable for electronic circuits.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: PNP Silicon
RoHS Compliance: Declared
Package Type: SOT-23
Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix series)

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CEO			-25	V
Collector-Base Voltage	V CBO			-40	V
Emitter-Base Voltage	V EBO			-5	V
Collector Current-Continuous	I C			-800	mAdc
DC Current Gain	H FE	100		600		I C =-100mA, VCE=-1V
Collector-Emitter Saturation Voltage	VCE(S)			-0.5	V	I C =-800mA, IB=-80mA
Collector-Emitter Breakdown Voltage	V (BR)CEO	-25			V	I C =-1.0mA
Emitter-Base Breakdown Voltage	V (BR)EBO	-5			V	I E = -100 A
Collector-Base Breakdown Voltage	V (BR)CBO	-40			V	I C= -100 A
Collector Cutoff Current	I CBO			-150	nA	VCB = -35 V
Emitter Cutoff Current	I EBO			-150	nA	VEB = -4V
Total Device Dissipation (FR-5 Board)	P D			225	mW	T A= 25 C
Derate above 25 C (FR-5 Board)				1.8	mW /C
Thermal Resistance, Junction to Ambient (FR-5 Board)	RJA			556	C/W
Total Device Dissipation (Alumina Substrate)	P D			300	mW	T A = 25 C
Derate above 25 C (Alumina Substrate)				2.4	mW /C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	RJA			417	C/W
Junction and Storage Temperature	T J , T stg	-55		+150	C