General purpose transistor LRC L2SC1623QLT1G with AEC Q101 certification and Pb free packaging options

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Product Description

Product Overview

The L2SC1623QLT1G Series is a set of general-purpose transistors designed for various electronic applications. These devices offer reliable performance with key electrical characteristics such as DC current gain, collector-emitter saturation voltage, and base-emitter on voltage.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Series: L2SC1623QLT1G
Package Type: SOT-23
Certifications: AEC-Q101 Qualified (for S- prefix variants)
Pb-Free Package: Available

Technical Specifications

Symbol	Parameter	Condition	Min	Typ	Max	Unit
MAXIMUM RATINGS
VCEO	Collector-Emitter Voltage				50	V
VCBO	Collector-Base Voltage				60	V
VEBO	Emitter-Base Voltage				7	V
IC	Collector current-continuous				150	mAdc
THERMAL CHARACTERISTICS
PD	Total Device Dissipation (FR-5 Board)	TA=25C			225	mW
RJA	Thermal Resistance, Junction to Ambient (FR-5 Board)				556	C/W
PD	Total Device Dissipation (Alumina Substrate)	TA=25C			300	mW
RJA	Thermal Resistance, Junction to Ambient (Alumina Substrate)				417	C/W
Tj, Tstg	Junction and Storage Temperature		-55		+150	C
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
ICBO	Collector Cutoff Current	VCB=60V			0.1	A
IEBO	Emitter Cutoff Current	VBE=5V			0.1	A
hFE	DC Current Gain	IC=1.0mA, VCE=6V	120	-	560	-
VCE(sat)	Collector-Emitter Saturation Voltage	IC=100mA, IB=10mA		0.15	0.3	V
VBE(sat)	Base-Emitter Saturation Voltage	IC=100mA, IB=10mA		0.86	1.0	V
VBE	Base-Emitter On Voltage	IC=1mA, VCE=6.0V	0.55	0.62	0.65	V
Ft	Current-Gain-Bandwidth Product	VCE=6.0V, IE =-10mA	250	-	-	MHz
Cob	Output Capacitance	VCE = 6V, IE=0, f=1.0MHz		-	3	pF
DEVICE MARKING
L2SC1623QLT1G			L5
L2SC1623RLT1G			L6
L2SC1623SLT1G			L7