Compact MCC95-12IO1B Thyristor Diode Module Littelfuse IXYS for Heat and Temperature Control Systems

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Price: Negotiable

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Product Description

Thyristor/Diode Modules - MCC 95 / MCD 95

These Thyristor/Diode Modules from IXYS are designed for high-power applications, offering space and weight savings with simple mounting. They feature international standard packages and planar passivated chips for reliable performance. Ideal for DC motor control, softstart AC motor controllers, and light, heat, and temperature control systems.

Product Attributes

Brand: IXYS
Package: JEDEC TO-240 AA
Base Plate: Direct copper bonded Al2O3-ceramic
Chip Type: Planar passivated
Isolation Voltage: 3600 V~
Certifications: UL registered (E 72873)
Gate/Cathode: Twin pins
Material: Copper bonded Al2O3-ceramic base plate

Technical Specifications

Type	VRRM (V)	ITAVM (A)	ITRMS (A)	ITSM (A)	I2t (A2s)	(dv/dt)cr (V/s)	VISOL (V~)	Weight (g)
MCC 95-08 io1B / io8B	800	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCD 95-08 io1B / io8B	800	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCC 95-12 io1B / io8B	1200	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCD 95-12 io1B / io8B	1200	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCC 95-14 io1B / io8B	1400	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCD 95-14 io1B / io8B	1400	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCC 95-16 io1B / io8B	1600	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCD 95-16 io1B / io8B	1600	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCC 95-18 io1B / io8B	1800	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85
MCD 95-18 io1B / io8B	1800	116	180	2400 (60Hz) / 2250 (50Hz)	19100 (60Hz) / 20000 (50Hz)	1000	3600	85

Electrical Characteristics (per thyristor/diode)

Symbol	Conditions	Characteristic Values (typ.)	Max.	Unit
VGT	VD = 6 V, TVJ = 25C	2.5		V
VGT	VD = 6 V, TVJ = -40C	2.6		V
IGT	VD = 6 V, TVJ = 25C	150	200	mA
IGT	VD = 6 V, TVJ = -40C		500	mA
VGD	VD = 2/3 VDRM, TVJ = TVJM	0.2	10	V
IGD	VD = 2/3 VDRM, TVJ = TVJM		10	mA
IL	tp = 10 s, VD = 6 V, TVJ = 25C, IG = 0.45 A; diG /dt = 0.45 A/s	450		mA
IH	VD = 6 V, RGK = , TVJ = 25C	200		mA
tgd	VD = VDRM, TVJ = 25C, IG = 0.45 A; diG /dt = 0.45 A/s	2		s
tq	VD = 2/3 VDRM, TVJ = TVJM, dv/dt = 20 V/s; -di/dt = 10 A/s, IT = 150 A; VR = 100 V; tp = 200 s	185		s
QS	IRM IT / IF = 50 A; -di/dt = 6 A/s, TVJ = TVJM	170		C
RthJC	per thyristor; DC current	0.22		K/W
RthJC	per module	0.11		K/W
RthJK	per thyristor; DC current	0.42		K/W
RthJK	per module	0.21		K/W