NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LMUN2232LT1G SOT23 Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The LMUN2232LT1G and S-LMUN2232LT1G are NPN Silicon Surface Mount Transistors with monolithic bias resistor networks. These devices simplify circuit design, reduce board space, and decrease component count. They are compliant with RoHS requirements and Halogen Free. The S-prefix variant is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S-prefix models)
- Device Type: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
- Package Type: SOT23 (TO-236)
- Origin: China (implied by manufacturer name and location)
Technical Specifications
| Parameter | Symbol | LMUN2232LT1G | S-LMUN2232LT1G | Unit | Notes |
|---|---|---|---|---|---|
| Device Marking and Resistor Values | |||||
| Device Marking | A8J | ||||
| Resistor R1 | R1(K) | 4.7 | K | ||
| Resistor R2 | R2(K) | 4.7 | K | ||
| Resistor Ratio | R1/R2 | 0.8 - 1.2 | |||
| Maximum Ratings (Ta = 25C) | |||||
| Collector-Emitter Voltage | VCEO | 50 | V | ||
| Collector Current Continuous | IC | 100 | mA | ||
| Collector-Base Voltage | VCBO | 50 | V | ||
| Thermal Characteristics | |||||
| Total Device Dissipation, FR5 Board | PD | 1.5 | W | @ TA = 25C, Note 1 | |
| Derate above 25C | mW/C | ||||
| Thermal Resistance, JunctiontoAmbient | RJA | C/W | Note 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 ~ +150 | C | ||
| Electrical Characteristics (Ta= 25C) | |||||
| OFF Characteristics | |||||
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 50 | - | V | (IC = 2.0 mA, IB = 0) |
| Collector-Base Breakdown Voltage | VBR(CBO) | 50 | - | V | (IC = 10 A, IE = 0) |
| Collector-Base Cutoff Current | ICBO | - | 50 | nA | (VCB = 50 V, IE = 0) |
| Collector-Emitter Cutoff Current | ICEO | - | 50 | nA | (VCE = 50 V, IB = 0) |
| Emitter-Base Cutoff Current | IEBO | - | 0.25 | mA | (VEB = 6.0 V, IC = 0) |
| ON Characteristics (Note 2.) | |||||
| DC Current Gain | HFE | 15 - 30 | (IC = 5.0 mA, VCE = 10 V) | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 0.25 | V | (IC = 10 mA, IB = 1 mA) |
| Input Resistor | R1 | 3.3 | K | ||
| Output Voltage (on) | VOL | - | 0.2 | V | (VCC = 5.0 V, VB = 2.5 V, RL =1.0K) |
| Output Voltage (on) | VOH | - | 0.8 | V | (VCC = 5.0 V, VB = 0.25 V, RL =1.0K) |
| Shipping | |||||
| Quantity | 3000/Tape&Reel | ||||
| Outline and Dimensions | |||||
| Dimension | Symbol | Min (mm) | Nom (mm) | Max (mm) | Min (in) |
| A | A | 0.89 | 1 | 1.11 | 0.035 |
| A1 | A1 | 0.01 | 0.06 | 0.1 | 0.001 |
| b | b | 0.35 | 0.54 | 0.69 | 0.014 |
| c | c | 0.09 | 0.13 | 0.18 | 0.003 |
| D | D | 2.80 | 2.9 | 3.04 | 0.11 |
| E | E | 1.20 | 1.3 | 1.4 | 0.047 |
| e | e | 1.78 | 1.9 | 2.04 | 0.07 |
| HE | HE | 2.10 | 2.4 | 2.64 | 0.083 |
| L | L | 0.10 | 0.2 | 0.3 | 0.004 |
| L1 | L1 | 0.37 | 0.44 | 0.5 | 0.015 |
Notes:
- FR-5 @ Minimum Pad.
- Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina