High speed switching monolithic dual diode LRC LBAV70LT1G common cathode PPAP capable and RoHS compliant

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Product Description

Product Overview

The LBAV70LT1G and S-LBAV70LT1G are monolithic dual switching diodes with a common cathode configuration. These diodes are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other demanding applications. They are designed for high-speed switching and feature RoHS compliance and Halogen-Free materials.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material Compliance: RoHS, Halogen Free
Certifications: AEC-Q101 qualified, PPAP capable
Device Type: Monolithic Dual Switching Diode, Common Cathode
Package: SOT23 (TO-236)

Technical Specifications

Model	Description	Reverse Voltage (VR)	Forward Current (IF)	Non-Repetitive Peak Forward Current (IFSM) t=1ms	Repetitive Peak Forward Current (IFRM)	Reverse Breakdown Voltage (VBR) (I(BR)=100A)	Forward Voltage (VF) (IF = 1.0 mA)	Forward Voltage (VF) (IF = 10 mA)	Forward Voltage (VF) (IF = 50 mA)	Forward Voltage (VF) (IF = 150 mA)	Reverse Voltage Leakage Current (IR) (VR = 70V)	Diode Capacitance (CD) (VR = 0V, f = 1.0 MHz)	Reverse Recovery Time (trr) (IF=IR=10mA,IR(REC)=1.0 mA,RL =100)	Junction and Storage Temperature (TJ,Tstg)	Shipping
LBAV70LT1G	Monolithic Dual Switching Diode	100 V	200 mA	1.8 A	500 mA	Min. 100 V	Typ. 715 mV	Typ. 855 mV	Typ. 1000 mV	Typ. 1250 mV	Max. 100 A	Typ. 6.0 pF	Max. 2 ns	-55 to +150 C	3000/Tape&Reel
S-LBAV70LT1G	Monolithic Dual Switching Diode (Automotive)	100 V	200 mA	1.8 A	500 mA	Min. 100 V	Typ. 715 mV	Typ. 855 mV	Typ. 1000 mV	Typ. 1250 mV	Max. 100 A	Typ. 6.0 pF	Max. 2 ns	-55 to +150 C	10000/Tape&Reel