NPN Silicon Bias Resistor Transistor LRC LMUN2241LT1G with Halogen Free and RoHS Compliant Materials
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The LMUN2241LT1G and S-LMUN2241LT1G are NPN Silicon Surface Mount Transistors with integrated Monolithic Bias Resistor Networks. These devices are designed to simplify circuit design, reduce board space, and lower component count. They are suitable for automotive and other applications requiring unique site and control change requirements, with the S-prefix variants being AEC-Q101 qualified and PPAP capable. The materials comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD. (LRC)
- Product Type: Bias Resistor Transistor
- Transistor Type: NPN Silicon
- Package Type: SOT23 (TO-236)
- Certifications: AEC-Q101 qualified (S-prefix models), PPAP capable (S-prefix models)
- Material Compliance: RoHS requirements, Halogen Free
Technical Specifications
| Parameter | Symbol | Model | R1 (K) | R2 (K) | Limits | Unit | Device Marking |
|---|---|---|---|---|---|---|---|
| Bias Resistor Transistor | LMUN2241LT1G | 100 | 3000/Tape&Reel | A8U | |||
| Bias Resistor Transistor | LMUN2241LT3G | 100 | 10000/Tape&Reel | A8U | |||
| Bias Resistor Transistor | S-LMUN2241LT1G | 100 | 3000/Tape&Reel | A8U | |||
| CollectorBase Voltage | VCBO | 50 | V | ||||
| CollectorEmitter Voltage | VCEO | 50 | V | ||||
| Total Device Dissipation, FR5 Board (@ TA = 25C) | PD | 246 | mW | ||||
| Derate above 25C | 1.5 | mW/C | |||||
| Thermal Resistance, JunctiontoAmbient (Note 1) | RJA | 508 | C/W | ||||
| Junction and Storage temperature | TJ,Tstg | -55+150 | C | ||||
| CollectorEmitter Breakdown Voltage (IC = 2.0 mA, IB = 0) | VBR(CEO) | 50 | V | ||||
| CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) | VBR(CBO) | 50 | V | ||||
| Collector-Base Cutoff Current (VCB = 50 V, IE = 0) | ICBO | 100 | nA | ||||
| Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) | ICEO | 500 | nA | ||||
| Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) | IEBO | 0.1 | A | ||||
| DC Current Gain (IC = 5 mA, VCE = 10 V) | HFE | 70 - 130 | |||||
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 2.5 mA) | VCE(sat) | 0.25 | V | ||||
| Input Resistor | R1 | 100 | K | ||||
| Output Voltage (on) (VCC = 5.0 V, VB = 5 V, RL =1.0K) | VOL | 0.2 | V | ||||
| Output Voltage (on) (VCC = 5.0 V, VB = 0.25 V, RL =1.0K) | VOH | 4.9 | V |
| DIM (mm) | X | Y | A | B | C |
|---|---|---|---|---|---|
| SOT23 | 0.80 | 0.90 | 2.00 | 0.95 | 0.95 |
| DIM | MIN | NOR | MAX |
|---|---|---|---|
| A | 0.89 | - | 1.12 |
| A1 | 0.01 | - | 0.10 |
| A2 | 0.88 | 0.95 | 1.02 |
| b | 0.30 | - | 0.50 |
| b1 | 0.30 | 0.40 | 0.45 |
| c | 0.08 | - | 0.20 |
| c1 | 0.08 | 0.10 | 0.16 |
| D | 2.80 | 2.90 | 3.04 |
| E | 2.10 | - | 2.64 |
| E1 | 1.20 | 1.30 | 1.40 |
| e | 0.95BSC | ||
| e1 | 1.90BSC | ||
| L | 0.40 | 0.46 | 0.60 |
| L1 | 0.54REF | ||
| 0 | 8 |
All Dimensions in mm
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