General purpose NPN silicon transistor LRC LBC817-16LT1G suitable for electronic device applications

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Product Description

General Purpose Transistors

The LBC817 series are NPN silicon general purpose transistors designed for a wide range of applications. They offer reliable performance in various operating conditions.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Certifications: RoHS compliant
Material: NPN Silicon

Technical Specifications

Characteristic	Symbol	LBC817-16	LBC817-25	LBC817-40	Unit	Conditions
CollectorEmitter Voltage	V CEO	45			V
CollectorBase Voltage	V CBO	50			V
EmitterBase Voltage	V EBO	5.0			V
Collector Current Continuous	I C	500			mAdc
Total Device Dissipation (FR5 Board)	P D	225			mW	TA = 25C
Thermal Resistance, Junction to Ambient (FR5 Board)	R JA	556			C/W
Total Device Dissipation (Alumina Substrate)	P D	300			mW	TA = 25C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	R JA	417			C/W
Junction and Storage Temperature	T J , T stg	55 to +150			C
CollectorEmitter Breakdown Voltage	V (BR)CEO	45			V	IC = 10 mA
CollectorEmitter Breakdown Voltage	V (BR)CES	50			V	VEB = 0, IC = 10 A
EmitterBase Breakdown Voltage	V (BR)EBO	5.0			V	IE = 1.0 A
Collector Cutoff Current	I CBO	100			nA	VCB = 20 V
Collector Cutoff Current	I CBO	5.0			A	VCB = 20 V, TA = 150C
DC Current Gain	h FE	100 250	160 400	250 600		IC = 100 mA, V CE = 1.0 V
CollectorEmitter Saturation Voltage	V CE(sat)	0.7			V	IC = 500 mA, IB = 50 mA
BaseEmitter On Voltage	V BE(on)	1.2			V	IC = 500 mA, V CE = 1.0 V
CurrentGain Bandwidth Product	f T	100			MHz	IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz
Output Capacitance	C obo	10			pF	V CB = 10 V, f = 1.0 MHz