General purpose PNP silicon transistor LRC S-L8550HQLT1G with AEC Q101 qualification and RoHS compliance
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Delivery Time:
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Product Description
Product Overview
The L8550HQLT1G and S-L8550HQLT1G are general-purpose PNP silicon transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors offer high current capacity in a compact SOT23 package and are manufactured with materials compliant with RoHS requirements and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD. (LRC)
- Origin: Not explicitly stated, but implied by manufacturer location.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix variant)
- Package Type: SOT23
Technical Specifications
| Parameter | Symbol | L8550HQLT1G / S-L8550HQLT1G | Unit | Notes |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -25 | V | |
| Collector-Base Voltage | VCBO | -40 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -1500 | mA | |
| Total Device Dissipation (FR-5 Board) | PD | 300 | mW | @ TA = 25C |
| Derate above 25C (FR-5 Board) | 2.4 | mW/|||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 417 | /W | |
| Total Device Dissipation (Alumina Substrate) | PD | 225 | mW | @ TA = 25C |
| Derate above 25C (Alumina Substrate) | 1.8 | mW/|||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 556 | /W | |
| Junction and Storage Temperature | TJ, Tstg | -55 ~ +150 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 | V | @ IC = -1.0mA |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | @ IE = -100A |
| Collector-Base Breakdown voltage | V(BR)CBO | -40 | V | @ IC = -100A |
| Collector Cutoff Current | ICBO | -150 | nA@ VCB = -35 V | |
| Emitter Cutoff Current | IEBO | -40 | nA@ VEB = -4V | |
| DC Current Gain | HFE | 150 - 300 | @ IC = -100mA, VCE = -1V | |
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | V | @ IC = -800mA, IB = -80mA |
| Collector-Emitter cutoff Current | ICEO | -10 | A | @ VCE = -25V, IB = 0 |
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