General purpose NPN silicon transistor LRC LMBT3904TT1G offering electrical characteristics and thermal performance
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The LMBT3904TT1G is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It offers simplified circuit design and is available in tape and reel packaging. The S- prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: RoHS compliance, AEC-Q101 Qualified (S- variants)
Technical Specifications
| Model | Description | Maximum Ratings | Electrical Characteristics (Typical unless otherwise noted) | Thermal Characteristics |
| LMBT3904TT1G | NPN Silicon Transistor | V CEO : 40 Vdc V CBO : 60 Vdc V EBO : 6.0 Vdc I C : 200 mAdc | V (BR)CEO : 40 Vdc V (BR)CBO : 60 Vdc V (BR)EBO : 6.0 Vdc I BL : 50 nAdc I CEX : 50 nAdc hFE : 40-300 (V CE=1.0 Vdc) VCE(sat) : 0.2-0.3 Vdc V BE(sat) : 0.65-0.95 Vdc f T : 200 MHz C obo : 4.0 pF C ibo : 8.0 pF h ie : 1.0-10 pF h re : 0.5-8.0 X10 4 h fe : 100-400 h oe : 1.0-40 mhos NF : 5.0 dB t d : 35 ns t r : 35 ns t s : 200 ns t f : 50 ns | PD : 200 mW (FR-4 Board, TA = 25C) RJA : 600 C/W (FR-4 Board) TJ , Tstg : 55 to +150 C |
| S-LMBT3904TT1G | AEC-Q101 Qualified NPN Silicon Transistor | V CEO : 40 Vdc V CBO : 60 Vdc V EBO : 6.0 Vdc I C : 200 mAdc | V (BR)CEO : 40 Vdc V (BR)CBO : 60 Vdc V (BR)EBO : 6.0 Vdc I BL : 50 nAdc I CEX : 50 nAdc hFE : 40-300 (V CE=1.0 Vdc) VCE(sat) : 0.2-0.3 Vdc V BE(sat) : 0.65-0.95 Vdc f T : 200 MHz C obo : 4.0 pF C ibo : 8.0 pF h ie : 1.0-10 pF h re : 0.5-8.0 X10 4 h fe : 100-400 h oe : 1.0-40 mhos NF : 5.0 dB t d : 35 ns t r : 35 ns t s : 200 ns t f : 50 ns | PD : 200 mW (FR-4 Board, TA = 25C) RJA : 600 C/W (FR-4 Board) TJ , Tstg : 55 to +150 C |
| LMBT3904TT3G | NPN Silicon Transistor | V CEO : 40 Vdc V CBO : 60 Vdc V EBO : 6.0 Vdc I C : 200 mAdc | V (BR)CEO : 40 Vdc V (BR)CBO : 60 Vdc V (BR)EBO : 6.0 Vdc I BL : 50 nAdc I CEX : 50 nAdc hFE : 40-300 (V CE=1.0 Vdc) VCE(sat) : 0.2-0.3 Vdc V BE(sat) : 0.65-0.95 Vdc f T : 200 MHz C obo : 4.0 pF C ibo : 8.0 pF h ie : 1.0-10 pF h re : 0.5-8.0 X10 4 h fe : 100-400 h oe : 1.0-40 mhos NF : 5.0 dB t d : 35 ns t r : 35 ns t s : 200 ns t f : 50 ns | PD : 200 mW (FR-4 Board, TA = 25C) RJA : 600 C/W (FR-4 Board) TJ , Tstg : 55 to +150 C |
| S-LMBT3904TT3G | AEC-Q101 Qualified NPN Silicon Transistor | V CEO : 40 Vdc V CBO : 60 Vdc V EBO : 6.0 Vdc I C : 200 mAdc | V (BR)CEO : 40 Vdc V (BR)CBO : 60 Vdc V (BR)EBO : 6.0 Vdc I BL : 50 nAdc I CEX : 50 nAdc hFE : 40-300 (V CE=1.0 Vdc) VCE(sat) : 0.2-0.3 Vdc V BE(sat) : 0.65-0.95 Vdc f T : 200 MHz C obo : 4.0 pF C ibo : 8.0 pF h ie : 1.0-10 pF h re : 0.5-8.0 X10 4 h fe : 100-400 h oe : 1.0-40 mhos NF : 5.0 dB t d : 35 ns t r : 35 ns t s : 200 ns t f : 50 ns | PD : 200 mW (FR-4 Board, TA = 25C) RJA : 600 C/W (FR-4 Board) TJ , Tstg : 55 to +150 C |
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Hefei Purple Horn E-Commerce Co., Ltd.
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