PNP transistor LRC LMBT4403WT1G featuring SC70 package and PPAP capability for circuit integration

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Product Description

Product Overview

The LMBT4403WT1G is a general-purpose PNP silicon transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications. It offers a combination of robust electrical characteristics and reliable performance, making it suitable for a wide range of circuit designs.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Device Marking: LMBT4403WT1G
Compliance: 2T compliance with RoHS requirements.
Certifications: AEC-Q101 Qualified and PPAP Capable.
Package: SC-70 (SOT-323)

Technical Specifications

Characteristic	Symbol	Min	Max	Unit	Conditions
MAXIMUM RATINGS
CollectorEmitter Voltage	V CEO		40	Vdc
CollectorBase Voltage	V CBO		40	Vdc
EmitterBase Voltage	V EBO		5.0	Vdc
Collector Current Continuous	I C		600	mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation	PD		150	mW	FR5 Board, TA = 25C
Thermal Resistance, JunctiontoAmbient	R JA		833	C/W
Junction and Storage Temperature	TJ, Tstg	55	+150	C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage	V (BR)CEO	40		Vdc	I C = 1.0 mAdc, I B = 0
CollectorBase Breakdown Voltage	V (BR)CBO	40		Vdc	I C = 0.1mAdc, I E = 0
EmitterBase Breakdown Voltage	V (BR)EBO	5.0		Vdc	I E = 0.1mAdc, I C = 0
Base Cutoff Current	I BEV		0.1	Adc	V CE = 35 Vdc, V EB = 0.4 Vdc
Collector Cutoff Current	I CEX		0.1	Adc	V CE = 35 Vdc, V EB = 0.4 Vdc
ON CHARACTERISTICS
DC Current Gain	hFE	30			I C = 0.1 mAdc, V CE = 1.0 Vdc
DC Current Gain	hFE	60			I C = 1.0 mAdc, V CE = 1.0 Vdc
DC Current Gain	hFE	100			I C = 10 mAdc, V CE = 1.0 Vdc
DC Current Gain	hFE	100	300		I C = 150 mAdc, V CE = 2.0 Vdc
DC Current Gain	hFE	20			I C = 500 mAdc, V CE = 2.0 Vdc
CollectorEmitter Saturation Voltage	VCE(sat)		0.4	Vdc	I C = 150mAdc, I B = 15 mAdc
CollectorEmitter Saturation Voltage	VCE(sat)		0.75	Vdc	I C = 500 mAdc, I B = 50 mAdc
BaseEmitter Saturation Voltage	V BE(sat)	0.75	0.95	Vdc	I C = 150 mAdc, I B = 15 mAdc
BaseEmitter Saturation Voltage	V BE(sat)		1.3	Vdc	I C = 500 mAdc, I B = 50 mAdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product	f T	200		MHz	I C = 20mAdc, V CE= 10 Vdc, f = 100 MHz
CollectorBase Capacitance	C cb		8.5	pF	V CB= 10 Vdc, I E = 0, f = 1.0 MHz
EmitterBase Capacitance	C eb		30	pF	V BE = 0.5 Vdc, I C = 0, f = 1.0 MHz
Input Impedance	h ie	1.5	15	k	V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz
Voltage Feedback Ratio	h re	0.1	8.0	X 10 4	V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz
SmallSignal Current Gain	h fe	60	500		V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz
Output Admittance	h oe	1.0	100	mhos	V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz
SWITCHING CHARACTERISTICS
Delay Time	t d		15	ns	V CC = 30 Vdc, V EB = 2.0 Vdc, I C = 150mAdc, I B1 = 15 mAdc
Rise Time	t r		20	ns
Storage Time	t s		225	ns	V CC = 30 Vdc, I C = 150 mAdc, I B1 = I B2 = 15 mAdc
Fall Time	t f		30	ns