High Reliability NPN Silicon Transistor LRC L9014QLT1G Ideal for Electronic Switching Applications

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Product Description

Product Overview

The L9014 is a general-purpose NPN Silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014 transistor. This device is suitable for various electronic applications requiring reliable switching and amplification.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Type: NPN Silicon Transistor
Complementary to: L9014
RoHS Compliance: Yes
Automotive Qualification (S-Prefix): AEC-Q101 Qualified and PPAP Capable

Technical Specifications

Symbol	Characteristic	Value	Unit	Conditions
VCEO	Collector-Emitter Voltage	45	V
VCBO	Collector-Base Voltage	50	V
VEBO	Emitter-Base Voltage	5	V
IC	Collector Current-Continuous	100	mA
PD	Total Device Dissipation (FR-5 Board)	225	mW	TA=25oC
PD	Total Device Dissipation (Alumina Substrate)	300	mW	TA=25oC
RJA	Thermal Resistance, Junction to Ambient (FR-5 Board)	556	°C/W
RJA	Thermal Resistance, Junction to Ambient (Alumina Substrate)	417	°C/W
TJ ,Tstg	Junction and Storage Temperature	-55 to +150	°C
V(BR)CEO	Collector-Emitter Breakdown Voltage	45	V	IC=1.0mA
V(BR)EBO	Emitter-Base Breakdown Voltage	5	V	IE=100µA
V(BR)CBO	Collector-Base Breakdown Voltage	50	V	IC=100µA
ICBO	Collector Cutoff Current	100	nA	VCB=40V
IEBO	Emitter Cutoff Current	100	nA	VEB=3V
HFE	DC Current Gain	150 - 1000		IC=1mA, VCE=5V
VCE(sat)	Collector-Emitter Saturation Voltage	-	0.3	V	IC=100mA, IB=5mA