NPN silicon transistor LRC L9014SLT1G featuring complementary design to L9014 and automotive grade qualification

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Product Description

Product Overview

The L9014 is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014 transistor and is designed for various electronic applications. The device is available in SOT-23 package and offers reliable performance with specified electrical and thermal characteristics.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Type: NPN Silicon Transistor
Complementary to: L9014
Material Compliance: RoHS
Automotive Qualification (S-Prefix): AEC-Q101 Qualified and PPAP Capable

Technical Specifications

Symbol	Characteristic	Value	Unit	Conditions
MAXIMUM RATINGS	Collector-Emitter Voltage (VCEO)	45	V
	Collector-Base Voltage (VCBO)	50	V
	Emitter-Base Voltage (VEBO)	5	V
	Collector Current-Continuous (IC)	100	mA
THERMAL CHARACTERISTICS	Total Device Dissipation (PD) on FR-5 Board	225	mW	TA=25oC, Derate above 25oC: 1.8 mW/C
	Thermal Resistance, Junction to Ambient (RJA) on FR-5 Board	556	C/W
	Total Device Dissipation (PD) on Alumina Substrate	300	mW	TA=25oC, Derate above 25oC: 2.4 mW/C
	Thermal Resistance, Junction to Ambient (RJA) on Alumina Substrate	417	C/W
Junction and Storage Temperature (TJ, Tstg)	-55 to +150	C
ELECTRICAL CHARACTERISTICS	Collector-Emitter Breakdown Voltage (V(BR)CEO)	45	V	IC=1.0mA
	Emitter-Base Breakdown Voltage (V(BR)EBO)	5	V	IE=100A
	Collector-Base Breakdown Voltage (V(BR)CBO)	50	V	IC=100A
	Collector Cutoff Current (ICBO)	100	nA	VCB=40V
	Emitter Cutoff Current (IEBO)	100	nA	VEB=3V
ON CHARACTERISTICS	DC Current Gain (HFE)	150 - 1000		IC=1mA, VCE=5V
	Collector-Emitter Saturation Voltage (VCE(sat))	-	0.3	V	IC=100mA, IB=5mA
	DC Current Gain (HFE)	150~1000		See Note * (Q, R, S, T)