PNP Silicon Transistor LRC LMBT3906WT1G Suitable for Automotive and Site Control Change Applications

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The LMBT3906WT1G and S-LMBT3906WT1G are general-purpose PNP silicon transistors designed for automotive and other applications requiring unique site and control change requirements. The 'S-' prefix variants are AEC-Q101 qualified and PPAP capable. These devices are RoHS compliant and Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Material: Silicon
Certifications: RoHS, Halogen Free, AEC-Q101 (for S- variants)

Technical Specifications

Parameter	Symbol	LMBT3906WT1G	S-LMBT3906WT1G	Unit	Min.	Typ.	Max.
MAXIMUM RATINGS
EmitterBase Voltage	VEBO			Vdc			-5
Collector Current Continuous	IC			mAdc			-200
CollectorEmitter Voltage	VCEO			Vdc	-40
CollectorBase Voltage	VCBO			Vdc	-40
THERMAL CHARACTERISTICS
Total Device Dissipation, FR5 Board @ TA = 25C	PD			mW		833
Derate above 25C				mW/C		1.2
Thermal Resistance, JunctiontoAmbient	RJA			C/W		150
Junction and Storage temperature	TJ,Tstg			C	-55		+150
ELECTRICAL CHARACTERISTICS (Ta= 25C)
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage	VBR(CEO)			V	-40
CollectorBase Breakdown Voltage	VBR(CBO)			V	-40
EmitterBase Breakdown Voltage	VBR(EBO)			V	-5
Collector Cutoff Current	ICEX			nA			-50
Base Cutoff Current	IBL			nA			-50
ON CHARACTERISTICS
DC Current Gain	HFE	60	80			100	300
CollectorEmitter Saturation Voltage	VCE(sat)			V		-0.25	-0.95
BaseEmitter Saturation Voltage	VBE(sat)			V		-0.4	-0.85
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product	fT			MHz		250
Output Capacitance	Cobo			pF		4.5
Input Capacitance	Cibo			pF		10
SWITCHING CHARACTERISTICS
Delay Time	td			ns		35
Rise Time	tr			ns		35
Storage Time	ts			ns		225
Fall Time	tf			ns		75
DEVICE MARKING AND ORDERING INFORMATION
Parameter	Symbol	LMBT3906WT1G	S-LMBT3906WT1G	Unit
Device Marking		2A	2A
Shipping		3000/Tape&Reel	10000/Tape&Reel
Package		SC70(SOT-323)	SC70(SOT-323)