NPN Silicon General Purpose Transistors LRC LBC847CWT1G SOT323 SC70 Package RoHS Compliant

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Product Description

LESHAN RADIO COMPANY, LTD. NPN Silicon General Purpose Transistors

This document details the specifications for LESHAN RADIO COMPANY, LTD.'s NPN Silicon General Purpose Transistors, including the BC846, BC847, and BC848 series. These transistors are designed for general-purpose applications and are available in the SOT-323 / SC-70 package. The product is Pb-Free and RoHS compliant.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: NPN Silicon
Package: SOT-323 / SC-70
Certifications: AEC-Q101 Qualified (for 'S-' prefix devices)
Compliance: RoHS

Technical Specifications

Model Series	CollectorEmitter Voltage (V CEO)	CollectorBase Voltage (V CBO)	EmitterBase Voltage (V EBO)	Collector Current Continuous (I C)	Total Device Dissipation (P D)	Thermal Resistance, Junction to Ambient (R JA)	Junction and Storage Temperature (T J, T stg)	Collector Cutoff Current (I CBO)	DC Current Gain (hFE)	CollectorEmitter Saturation Voltage (V CE(sat))	BaseEmitter Saturation Voltage (V BE(sat))	BaseEmitter Voltage (V BE(on))	CurrentGain Bandwidth Product (f T)	Output Capacitance (Cobo)	Noise Figure (NF)
BC846	65 V	80 V	6.0 V	100 mAdc	150 mW	833 C/W	55 to +150 C	15 nA (VCB = 30 V) / 5.0 A (VCB = 30 V, TA = 150C)	110180 (BC846A) / 200290 (BC846B)	0.25 V (IC = 10 mA) / 0.6 V (IC = 100 mA)	0.7 V (IC = 10 mA) / 0.9 V (IC = 100 mA)	580700 mV (IC = 2.0 mA) / 770 mV (IC = 10 mA)	100 MHz (IC = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)	4.5 pF (VCB = 10 V, f = 1.0 MHz)	10 dB (IC = 0.2 mA, V CE = 5.0 Vdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
BC847	45 V	50 V	6.0 V	100 mAdc					220450 (BC847A) / 420520 (BC847B) / 520800 (BC847C)	0.25 V (IC = 10 mA) / 0.6 V (IC = 100 mA)	0.7 V (IC = 10 mA) / 0.9 V (IC = 100 mA)	580700 mV (IC = 2.0 mA) / 770 mV (IC = 10 mA)
BC848	30 V	30 V	5.0 V	100 mAdc					290600 (BC848A) / 450800 (BC848B) / 6001000 (BC848C)	0.25 V (IC = 10 mA) / 0.6 V (IC = 100 mA)	0.7 V (IC = 10 mA) / 0.9 V (IC = 100 mA)	580700 mV (IC = 2.0 mA) / 770 mV (IC = 10 mA)