NPN Silicon Transistor LRC LBC847BTT1G SC89 Package Designed General Purpose Amplifier Surface Mount

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Product Description

Product Overview

These NPN silicon transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package, which is suitable for low power surface mount applications. Pb-Free packages are available.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Series: LBC847ATT1G Series
Package: SC-89
Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix variants)

Technical Specifications

Characteristic	Symbol	LBC847A (Min/Typ/Max)	LBC847B (Min/Typ/Max)	LBC847C (Min/Typ/Max)	Unit
MAXIMUM RATINGS
CollectorEmitter Voltage	VCEO	45			V
CollectorBase Voltage	VCBO	50			V
EmitterBase Voltage	VEBO	6.0			V
Collector Current Continuous	IC	100			mAdc
THERMAL CHARACTERISTICS (Note 1: FR-4 @ min pad)
Total Device Dissipation	PD	200			mW
Derated above 25C		1.6			mW/C
Thermal Resistance, JunctiontoAmbient	R JA	600			C/W
THERMAL CHARACTERISTICS (Note 2: FR-4 @ 1.0 x 1.0 in pad)
Total Device Dissipation	PD	300			mW
Derated above 25C		2.4			mW/C
Thermal Resistance, JunctiontoAmbient	R JA	400			C/W
Junction and Storage Temperature Range	TJ, Tstg	55 to +150			C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
CollectorEmitter Breakdown Voltage (IC = 10 mA)	V(BR)CEO	45			V
CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0)	V(BR)CES	50			V
CollectorBase Breakdown Voltage (IC = 10 A)	V(BR)CBO	50			V
EmitterBase Breakdown Voltage (IE = 1.0 mA)	V(BR)EBO	6.0			V
Collector Cutoff Current (VCB = 30 V)	ICBO				nA
Collector Cutoff Current (VCB = 30 V, TA = 150C)	ICBO	5.0			A
DC Current Gain (IC = 10 A, VCE = 5.0 V)	hFE	110	200	420
DC Current Gain (IC = 2.0 mA, VCE = 5.0 V)	hFE	90220	150450	270800
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	VCE(sat)	0.25			V
CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	VCE(sat)	0.6			V
BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	VBE(sat)	0.7			V
BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)	VBE(sat)	0.9			V
BaseEmitter Voltage (IC = 2.0 mA, VCE = 5.0 V)	VBE(on)	580770	660770	700770	mV
BaseEmitter Voltage (IC = 10 mA, VCE = 5.0 V)	VBE(on)	700			mV
CurrentGain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)	fT	100			MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)	Cobo	4.5			pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)	NF	10			dB