General Purpose MCC BD882-Y-TP Silicon NPN Transistor with 30 Volt Collector Emitter Voltage Rating

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Product Description

Product Overview

The BD882 is a Silicon NPN epitaxial planar transistor designed for general-purpose applications. It offers a power dissipation of 0.5 W and features a Halogen Free, "Green" Device designation. This RoHS compliant component is suitable for various electronic circuits requiring reliable NPN transistor performance.

Product Attributes

Brand: MCCSEMI
Certifications: Halogen Free ("Green" Device), RoHS Compliant
Flammability Rating: Epoxy Meets UL 94 V-0

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Collector-Emitter Voltage	VCEO	30	V	@ 25C Unless Otherwise Specified
Collector-Base Voltage	VCBO	40	V	@ 25C Unless Otherwise Specified
Emitter-Base Voltage	VEBO	6	V	@ 25C Unless Otherwise Specified
Continuous Collector Current	IC	3	A	@ 25C Unless Otherwise Specified
Power Dissipation	PD	0.5	W	@ 25C Unless Otherwise Specified
Operating Junction Temperature Range		-55 to +150
Storage Temperature Range		-55 to +150
Thermal Resistance		250	/W	Junction to Ambient
Collector Cutoff Current	ICEO	10	A	VCE=30V, IB=0
Base-Emitter Saturation Voltage	VBE(sat)	1.5	V	IC=2A, IB=0.2A
Collector-Emitter Breakdown Voltage	V(BR)CEO	30	V	IC=100A, IE=0
Collector-Base Breakdown Voltage	V(BR)CBO	40	V	IC=10mA, IB=0
Collector Cutoff Current	ICBO	1	A	VCB=40V, IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO	6	V	IE=100A, IC=0
DC Current Gain	hFE	60 to 400		VCE=2V, IC=1A
Emitter Cutoff Current	IEBO	1	A	VCB=40V, IE=0
Collector-Emitter Saturation Voltage	VCE(sat)	0.5	V	IC=2A, IB=0.2A
Transition Frequency	fT	50	MHz	VCE=5V,IC=0.1A, f=10MHz