Low Saturation Voltage NPN Silicon Transistor MCC 2SC2873-Y-TP Featuring Halogen Free and RoHS Compliance

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Product Description

Product Overview

The 2SC2873-O/2SC2873-Y is an NPN Silicon Epitaxial Transistor designed for high-speed switching applications. It features low saturation voltage and is complementary to the 2SA1213. This device is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability rating.

Product Attributes

Brand: MCCSEMI
Origin: Not specified
Material: Silicon Epitaxial
Color: Not specified
Certifications: RoHS Compliant, Halogen Free ("Green" Device), UL 94 V-0 Flammability Rating
Moisture Sensitivity Level: 1

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
Collector Power Dissipation	PC	500	mW	@ 25C Unless Otherwise Specified
Collector Current	IC	2	A	@ 25C Unless Otherwise Specified
Collector-Emitter Voltage	VCEO	50	V	@ 25C Unless Otherwise Specified
Emitter-Base Voltage	VEBO	5	V	@ 25C Unless Otherwise Specified
Collector-Base Voltage	VCBO	50	V	@ 25C Unless Otherwise Specified
Operating Junction Temperature Range		-55 to +150
Storage Temperature Range		-55 to +150
Thermal Resistance (Junction to Ambient)		250	/W
Collector-Base Cutoff Current	ICBO	0.1	A	VCB=50V, IE=0
Emitter-Base Cutoff Current	IEBO	0.1	A	VEB=5V, IC=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	50	V	IC=1mA, IB=0
Collector-Base Breakdown Voltage	V(BR)CBO	50	V	IC=100A, IE=0
Emitter-Base Breakdown Voltage	V(BR)EBO	5	V	IE=100A, IC=0
DC Current Gain (Rank O)	hFE1	70-140		VCE=2V, IC=0.5A
DC Current Gain (Rank Y)	hFE1	120-240		VCE=2V, IC=0.5A
DC Current Gain (Rank O/Y)	hFE2	20		VCE=2V, IC=2A
Transition Frequency	fT	120	MHz	VCE=2V, IC=0.5A
Collector-Emitter Saturation Voltage	VCE(sat)	0.5	V	IC=1A, IB=50mA
Base-Emitter Saturation Voltage	VBE(sat)	1.2	V	IC=1A, IB=50mA
Collector Output Capacitance	Cob	30	pF	VCB=10V, IE=0, f=1MHz