PNP General Purpose Amplifier MCC MMBT4403-TP SOT-23 Package RoHS Compliant UL 94 V0 Certified
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Product Description
MMBT4403 PNP General Purpose Amplifier
The MMBT4403 is a PNP general-purpose amplifier in a SOT-23 package, capable of 350mW of power dissipation. It is designed for various amplification applications and features a lead-free finish, RoHS compliance, and an epoxy that meets UL 94 V-0 flammability rating. This component is also moisture sensitivity level 1 and available in a halogen-free option.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Package: SOT-23
- Certifications: RoHS Compliant, UL 94 V-0 flammability rating, Moisture Sensitivity Level 1
- Available Options: Halogen free upon request (suffix "-HF")
Technical Specifications
| Parameter | Min | Max | Units | Conditions |
|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | 40 | Vdc | IC=1.0mAdc, IB=0 | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 40 | Vdc | IC=100Adc, IE=0 | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 5.0 | Vdc | IE=100Adc, IC=0 | |
| Base Cutoff Current (IBL) | 0.1 | Adc | VCE=30Vdc, VBE=3.0Vdc | |
| Collector Cutoff Current (ICEX) | 0.1 | Adc | VCE=30Vdc, VBE=3.0Vdc | |
| DC Current Gain (hFE) | 30 | IC=0.1mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 60 | IC=1.0mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 100 | IC=10mAdc, VCE=1.0Vdc | ||
| DC Current Gain (hFE) | 100 | IC=150mAdc, VCE=2.0Vdc | ||
| DC Current Gain (hFE) | 300 | IC=500mAdc, VCE=2.0Vdc | ||
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.4 | Vdc | IC=150mAdc, IB=15mAdc | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.75 | Vdc | IC=500mAdc, IB=50mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.75 | Vdc | IC=150mAdc, IB=15mAdc | |
| Base-Emitter Saturation Voltage (VBE(sat)) | 0.95 | 1.30 | Vdc | IC=500mAdc, IB=50mAdc |
| Current Gain-Bandwidth Product (fT) | 200 | MHz | IC=20mAdc, VCE=10Vdc, f=100MHz | |
| Output Capacitance (Ccb) | 8.5 | pF | VCB=10Vdc, IE=0, f=1.0MHz | |
| Input Capacitance (Ceb) | 30.0 | pF | VEB=0.5Vdc, IC=0, f=1.0MHz | |
| Delay Time (td) | 15 | ns | VCC=3.0Vdc, VBE=2.0Vdc, IC=150mAdc, IB1=15mAdc | |
| Rise Time (tr) | 20 | ns | VCC=3.0Vdc, IC=150mAdc, IB1=15mAdc | |
| Storage Time (ts) | 225 | ns | VCC=3.0Vdc, IC=150mAdc, IB1=IB2=15mAdc | |
| Fall Time (tf) | 30 | ns | VCC=3.0Vdc, IC=150mAdc, IB1=IB2=15mAdc | |
| Thermal Resistance, Junction to Ambient (RthJA) | 357 | C/W | NOTE 2 | |
| Maximum Power Dissipation (PD(MAX)) | 350 | mW |
NOTE 1: Pulse Width 300s, Duty Cycle 2.0%
NOTE 2: For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Operating and Storage Junction Temperatures: -55C to 150C
Marking: 2T/M3A
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