Automotive high voltage transistor LRC LMBT5551LT1G HW featuring RoHS and Halogen Free certification

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Product Description

Product Overview

The LMBT5551LT1G and S-LMBT5551LT1G are high voltage transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variant is AEC-Q101 qualified and PPAP capable. These transistors are RoHS compliant and Halogen Free.

Product Attributes

Brand: Leshan Radio Company, LTD.
Certifications: RoHS, Halogen Free, AEC-Q101 (S- prefix)
Origin: China (implied by manufacturer)

Technical Specifications

Parameter	Symbol	LMBT5551LT1G	S-LMBT5551LT1G	Unit	Notes
Collector-Emitter Voltage	VCEO	160	160	V
Collector-Base Voltage	VCBO	180	180	V
Emitter-Base Voltage	VEBO	6	6	V
Collector current--Continuous	IC	225	225	mA
Total Device Dissipation, FR-5 Board	PD	225	225	mW	@ TA = 25C, FR-5 = 1.0x0.75x0.062 in.
Derate above 25C		1.8	1.8	mW/C
Thermal Resistance, Junction-to-Ambient	RJA	417	417	/W
Total Device Dissipation, Alumina Substrate	PD	556	556	mW	@ TA = 25C, Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Derate above 25C		2.4	2.4	mW/C
Thermal Resistance, Junction-to-Ambient	RJA	1.8	1.8	/W
Junction and Storage temperature	TJ,Tstg	-55~+150	-55~+150
Collector-Emitter Breakdown Voltage	V(BR)CEO	160	160	V	(IC = 1.0 mA, IB = 0)
Collector-Base Breakdown voltage	V(BR)CBO	180	180	V	(IC = 100A, IE = 0)
Emitter-Base Breakdown Voltage	V(BR)EBO	6	6	V	(IE = 10 A, IC = 0)
Collector Cutoff Current	ICBO	50	50	nA	(VCB = 120 V, IE = 0)
Collector Cutoff Current	ICBO	100	100	nA	(VCB = 120 V, IE = 0, TA = 100C)
Emitter Cutoff Current	IEBO	50	50	nA	(VEB = 4.0 V, IC = 0)
DC Current Gain	HFE	80-250	80-250		(IC = 1.0 mA, VCE = 5.0 V)
DC Current Gain	HFE	-	-		(IC = 10 mA, VCE = 5.0 V)
DC Current Gain	HFE	-	-		(IC = 50 mA, VCE = 5.0 V)
Collector-Emitter Saturation Voltage	VCE(S)	0.2	0.2	V	(IC = 10 mA, IB = 1.0 mA)
Collector-Emitter Saturation Voltage	VCE(S)	0.15	0.15	V	(IC = 50 mA, IB = 5.0 mA)
Base-Emitter Saturation Voltage	VBE(S)	1	1	V	(IC = 10 mA, IB = 1.0 mA)
Base-Emitter Saturation Voltage	VBE(S)	1	1	V	(IC = 50 mA, IB = 5.0 mA)
Collector Emitter Cut-off Current	ICES	50	50	nA	(VCE = 10 V)
Collector Emitter Cut-off Current	ICES	100	100	nA	(VCE = 75 V)
Collector-Emitter cutoff Current	ICEO	10	10	A	(VCE110V, IB=0)