NPN Silicon Planar Transistor MCC FMMT491 TP with Halogen Free Green Compliance and UL 94 V0 Rating
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Product Description
Product Overview
The FMMT491 is a high-performance NPN Silicon Planar Transistor designed for various electronic applications. It offers features such as halogen-free "Green" device compliance, moisture sensitivity level 1, and adherence to UL 94 V-0 flammability rating. This lead-free and RoHS-compliant transistor is suitable for applications requiring robust performance and reliability.
Product Attributes
- Brand: MCCSEMI.COM
- Device Type: NPN Silicon Planar High Performance Transistor
- Certifications: Halogen Free, "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 60 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 1 | A | @ 25C Unless Otherwise Specified |
| Power Dissipation | PD | 500 | mW | @ 25C Unless Otherwise Specified |
| Collector-Base Cutoff Current | ICBO | 0.1 | A | VCB=60V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.1 | V | IC=1A, IB=100mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=1A, IB=100mA |
| DC Current Gain | hFE(3) | 80 | VCE=5V, IC=1A | |
| DC Current Gain | hFE(4) | 30 | VCE=5V, IC=2A | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 80 | V | IC=0.1 A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=0.1 mA, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 60 | V | IC=10 A, IB=0 |
| Emitter-Base Cutoff Current | IEBO | 0.1 | A | VEB=4V, IC=0 |
| Transition Frequency | fT | 150 | MHz | VCE=5V, IC=50mA, f=100MHz |
| Output Capacitance | Cob | 10 | pF | VCB=10V, IE=0, f=1MHz |
| DC Current Gain | hFE(1) | 100 | VCE=5V, IC=1mA | |
| DC Current Gain | hFE(2) | 100 | 300 | VCE=5V, IC=500mA |
| Base-Emitter Voltage | VBE | 0.25 | V | VCE=5V, IC=1mA |
| Base-Emitter Voltage | VBE | 1.0 | V | VCE=5V, IC=500mA |
| Collector Power Dissipation | PD | 400 | mW | Tamb=25C (Derated) |
| Operating Junction Temperature | TJ | +150 | ||
| Storage Temperature | Ts | +150 |
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