General Purpose PNP Transistor MCC DMMT3906-TP Plastic Encapsulated Halogen Free and RoHS Compliant Device

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Product Description

Product Overview

The DMMT3906 is a PNP plastic encapsulated transistor featuring an epitaxial planar die construction. It is designed for general-purpose applications and offers advantages such as being halogen-free, moisture sensitivity level 1, and compliant with UL 94 V-0 flammability rating. This device is lead-free and RoHS compliant, suitable for various electronic circuits requiring PNP transistor functionality.

Product Attributes

Brand: MCCSEMI
Internal Structure Marking: K3Q
Material: Plastic Encapsulate
Color: Not specified
Certifications: Halogen Free, "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Operating Junction Temperature Range		-55		+150		Unless Otherwise Specified
Storage Temperature Range		-55		+150		Unless Otherwise Specified
Collector Current	IC			-200	mA	(2) @ 25C
Collector Power Dissipation	PC			200	mW	@ 25C
Collector-Emitter Voltage	VCEO			-40	V
Emitter-Base Voltage	VEBO			-5	V
Collector-Base Voltage	VCBO			-40	V
Typical Thermal Resistance	Rth(j-a)		625		/W	Junction to Ambient
DC Current Gain	hFE(1)	60				VCE=-1V, IC=-10mA
DC Current Gain	hFE(2)		80			VCE=-1V, IC=-50mA
DC Current Gain	hFE(3)	100	300			VCE=-1V, IC=-1mA
DC Current Gain	hFE(4)	60				VCE=-1V, IC=-0.1mA
DC Current Gain	hFE(5)		30			VCE=-30V, VBE(OFF)=-3V
Collector Cutoff Current	ICEX			-50	nA	VCE=-30V, VBE(OFF)=-3V
Emitter-Base Cutoff Current	IBL			-50	nA	IE=-10A, IC=0
Emitter-Base Breakdown Voltage	V(BR)EBO	-5			V	IC=-10A, IE=0
Collector-Emitter Breakdown Voltage	V(BR)CEO	-40			V	IC=-1mA, IB=0
Collector-Base Breakdown Voltage	V(BR)CBO	-40			V
Base-Emitter Saturation Voltage	VBE(sat)	-0.65	-0.85		V	IC=-10mA, IB=-1mA
Base-Emitter Saturation Voltage	VBE(sat)	-0.4	-0.5		V	IC=-50mA, IB=-5mA
Collector-Emitter Saturation Voltage	VCE(sat)	-0.25			V	IC=-10mA, IB=-1mA
Collector-Emitter Saturation Voltage	VCE(sat)		-0.2		V	IC=-100mA, IB=-5mA
Fall Time	tf			75	ns	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
Storage Time	ts			225	ns	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
Rise Time	tr			35	ns	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
Delay Time	td			35	ns	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
Output Capacitance	Ccbo		4.5		pF	VCE=-20V, IC=-10mA, f=100MHz
Transition Frequency	fT	250			MHz	VCB=-5V, IE=0, f=1MHz