Plastic encapsulate transistor medium power switching luJing MMBT4403 general purpose NPN bipolar transistor

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Product Description

Product Overview

The MMBT4403 is a general-purpose NPN bipolar transistor designed for medium power amplification and switching. It features epitaxial planar die construction and is available in complementary PNP type (MMBT3906) and lead-free versions. Ideal for medium power applications.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulate Transistors
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Value	UNIT	Test conditions	MIN.	MAX.
V_CEO	Collector-base voltage	40	V
V_CBO	Collector-emitter voltage	40	V
V_EBO	Emitter-base voltage	5	V
I_C	Collector current	0.6	A	'
P_D	Collector dissipation	0.625	W
R_thJA	Thermal Resistance Junction to Ambient	160	°C/W
T_J, T_stg	Junction and storage temperature	-55 to +150	°C
V_(BR)CEO	Collector-base breakdown voltage		V	I_C = 10 µA, I_E = 0	40
V_(BR)EBO	Collector-emitter breakdown voltage		V	I_C = 10 mA, I_B = 0	6
V_(BR)EBO	Emitter-base breakdown voltage		V	I_E = 10 µA, I_C = 0	6
I_CBO	Collector cut-off current		µA	V_CE = 30 V, V_BE = 0		50
I_LBO	Base cut-off current		µA	V_CE = 30 V, V_BE = 0		50
h_FE	DC current gain			V_CE = 10 V, I_C = 100 µA	100
				V_CE = 10 V, I_C = 1 mA	100
				V_CE = 10 V, I_C = 10 mA	100
				V_CE = 10 V, I_C = 100 mA	30
				V_CE = 10 V, I_C = 500 mA	20
V_CE(sat)	Collector-emitter saturation voltage		V	I_C = 500 mA, I_B = 50 mA		0.3
V_EB(sat)	Base-emitter saturation voltage		V	I_C = 500 mA, I_B = 50 mA		0.95
f_T	Transition frequency		MHz	I_C = 10 mA, V_CE = 10 V	300