Low Forward Voltage Schottky Diode LRC LBAT54BST5G Ideal for High Speed Switching Electronic Circuits

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Product Description

Product Overview

The LBAT54BST5G/S-LBAT54BST5G are Schottky Barrier Diodes designed for high-speed switching applications. They offer a low forward voltage of 0.35 Volts (Typ) at 10 mAdc, contributing to efficient operation. These diodes are suitable for various electronic circuits requiring fast response times and low power loss.

Product Attributes

Brand: Leshan Radio Company, LTD.
Origin: China
Material Compliance: RoHS requirements
Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix)

Technical Specifications

Symbol	Parameter	Min.	Typ.	Max.	Unit	Device	Marking	Order Information
VBR	Reverse Breakdown Voltage (IR = 10Adc)	30	-	-	V	LBAT54BST1G	R	8000/Tape&Reel
						LBAT54BST3G	T	10000/Tape&Reel
						LBAT54BST5G	S	5000/Tape&Reel
						S-LBAT54BST5G	S	5000/Tape&Reel
CT	Diode Capacitance (VR =1.0V , f = 1.0 MHz)	-	7.6	10	pF	All	All	All
IR	Reverse Voltage Leakage Current (VR = 25Vdc)	-	0.5	2	A
VF	Forward Voltage (IF = 10 mAdc)	-	0.35	-	V
trr	Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)	-	-	5	ns
IF	Forward Current (DC)	-	-	200	mA
IFRM	Repetitive Peak Forward Current	-	-	300	mA
IFSM	NonRepetitive Peak Forward Current (t < 1.0 s)	-	-	600	mA
PD	Total Device Dissipation, FR5 Board (Note 1) @ TA = 25C	-	400	-	mW	FR5 Board (Note 1)
	Derate above 25C	-	-	3.2	mW/C	FR5 Board (Note 1)
RJA	Thermal Resistance, JunctiontoAmbient	-	-	250	C/W	FR5 Board (Note 1)
TJ	Junction Temperature	-	-	125	C
Tstg	Storage temperature	-55	-	+150
VR	Reverse Voltage	-	-	30	Vdc