Schottky Barrier Diode LBAS40-06LT1G Ideal for Voltage Clamping and Protection Circuits Applications
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Product Description
Product Description
Planar Schottky barrier diodes with an integrated guard ring for stress protection. These diodes offer low forward current, low diode capacitance, and are guard ring protected, making them ideal for ultra-high-speed switching, voltage clamping, protection circuits, and blocking diode applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Certifications: RoHS compliant
Technical Specifications
| Model | Continuous Reverse Voltage (V) | Continuous Forward Current (mA) | Repetitive Peak Forward Surge Current (mA) | Non-Repetitive Peak Forward Current (mA) | Storage Temperature (C) | Junction Temperature (C) | Operating Ambient Temperature (C) | Forward Voltage (mV) | Reverse Current (A) | Diode Capacitance (pF) | Thermal Resistance (K/W) |
| BAS40-05 / LBAS40-05LT1G | -40 | 120 | 120 (tp<1s;<0.5) | 200 (tp<10ms) | -65 to +150 | 150 | -65 to +150 | 400 (IF=1mA) 560 (IF=10mA) 1 (IF=40mA) | 1 (VR=30V) 10 (VR=40V) | 5 (f=1MHz;VR=0) | 500 |
| BAS40-06 / LBAS40-06LT1G | -40 | 120 | 120 (tp<1s;<0.5) | 200 (tp<10ms) | -65 to +150 | 150 | -65 to +150 | 400 (IF=1mA) 560 (IF=10mA) 1 (IF=40mA) | 1 (VR=30V) 10 (VR=40V) | 5 (f=1MHz;VR=0) | 500 |
| BAS40 / LBAS40LT1G | -40 | 120 | 120 (tp<1s;<0.5) | 200 (tp<10ms) | -65 to +150 | 150 | -65 to +150 | 400 (IF=1mA) 560 (IF=10mA) 1 (IF=40mA) | 1 (VR=30V) 10 (VR=40V) | 5 (f=1MHz;VR=0) | 500 |
| BAS40-04 / LBAS40-04LT1G | -40 | 120 | 120 (tp<1s;<0.5) | 200 (tp<10ms) | -65 to +150 | 150 | -65 to +150 | 400 (IF=1mA) 560 (IF=10mA) 1 (IF=40mA) | 1 (VR=30V) 10 (VR=40V) | 5 (f=1MHz;VR=0) | 500 |
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