General purpose amplifier transistor luJing MMBT2222A with epitaxial planar die and high reliability

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Product Description

Product Overview

General Purpose Amplifier with Epitaxial planar die construction. Features high stability and high reliability. Available in SOT-23 plastic encapsulation.

Product Attributes

Case Style: SOT-23
Material: Molded Plastic
Mounting Position: Any
Color: Not Specified
Brand: Not Specified
Origin: Not Specified
Certifications: Not Specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector - Base Voltage	VCBO				7	V
Collector - Emitter Voltage	VCEO				40	V
Emitter - Base Voltage	VEBO				6	V
Collector Current - Continuous	IC				600	mA
Collector Power Dissipation	PD				150	mW
Thermal resistance from junction to ambient	RJA			417	C/W
Junction Temperature	TJ				150	C
Storage Temperature Range	Tstg		-55		150	C
Collector Base Breakdown Voltage	V(BR)CBO	IC=10uA, IE=0			7	V
Collector Emitter Breakdown Voltage	V(BR)CEO	IC=10mA, IB=0			40	V
Emitter Base Breakdown Voltage	V(BR)EBO	IE=10uA, IC=0			6	V
Collector cutoff current	ICBO	VCE=7V, VEB off			10	nA
Collector cut off current	ICEX	VCE=40V, VBE off			10	nA
Emitter cutoff current	IEBO	VEB=6V, IC off			10	nA
Transition frequency	fT	VCE=5V, IC=10mA		100	MHz
Delay time	td	VCC=5V, IC=10mA, IB1=1mA		1.00	ns
Rise time	tr	VCC=5V, IC=10mA, IB1=1mA		0.3	ns
Storage time	ts	VCC=5V, IC=10mA, IB1=1mA, IB2=-1mA				ns
Fall time	tf	VCC=5V, IC=10mA, IB1=1mA, IB2=-1mA				ns
Collector emitter saturation voltage	VCE(sat)	IC=10mA, IB=1mA		0.3		V
Base emitter saturation voltage	VBE(sat)	IC=10mA, IB=1mA		0.9		V
Current gain	hFE	VCE=5V, IC=10mA	200