High Speed Switching IGBT 650V 40A Luxin-semi YGW40N65F1 Featuring Stable Temperature and Low VCEsat
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Product Description
Product Overview
The YGW40N65F1 is a 650V / 40A Trench Field Stop IGBT designed for high-speed switching applications. It offers high breakdown voltage for improved reliability, enhanced ruggedness, stable temperature performance, low VCEsat, and easy parallel switching capability due to its positive temperature coefficient in VCEsat. The device also features enhanced avalanche capability.
Product Attributes
- Packaging: TO247 Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| DC collector current, limited by Tjmax | IC | TC = 25C | 80 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 40 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 80 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 100C | 40 | A | ||
| Continuous Gate-emitter voltage | VGE | 20 | V | |||
| Transient Gate-emitter voltage | VGE | 30 | V | |||
| Turn off safe operating area | VCE 650V, Tj 175C, tp = 1s | - | 120 | A | ||
| Pulse collector current, VGE =15V, tp limited by Tjmax | ICM | 120 | A | |||
| Power dissipation, Tj=25C | Ptot | 188 | W | |||
| Operating junction temperature | Tj | -40 | 175 | C | ||
| Storage temperature | TS | -55 | 150 | C | ||
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | 260 | C | |||
| Mounting torque, M3 screw | Maximum of mounting processes: 3 M | 0.6 | Nm | |||
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |||
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |||
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |||
| Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250uA | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.0 | 4.9 | 5.6 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=40A, Tj = 25C | 1.80 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=40A, Tj = 175C | 2.60 | V | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | - | 0.1 | A | |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 175C | - | 40 | A | |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | 100 | nA | |
| Transconductance | gfs | VCE = 20V, IC = 40A | - | 20 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | - | 2100 | - | pF |
| Output capacitance | Coes | - | 100 | - | pF | |
| Reverse transfer capacitance | Cres | - | 40 | - | pF | |
| Gate charge | QG | VCC = 520V, IC = 40A, VGE = 15V | - | 90 | - | nC |
| Switching Characteristic, Inductive Load | ||||||
| Turn-on Delay Time | td(on) | Tj=25C, VCC = 400V, IC = 40.0A, VGE = 0.0/15.0V, Rg=20 | - | 45 | - | ns |
| Rise Time | tr | - | 80 | - | ns | |
| Turn-off Delay Time | td(off) | - | 120 | - | ns | |
| Fall Time | tf | - | 75 | - | ns | |
| Turn-on Energy | Eon | - | 2.0 | - | mJ | |
| Turn-off Energy | Eoff | - | 0.4 | - | mJ | |
| Electrical Characteristics of the DIODE | ||||||
| Diode Forward Voltage | VFM | IF = 40A | - | 1.8 | 2.4 | V |
| Reverse Recovery Time | Trr | IF= 40A, VR = 400V, di/dt= 300A/s | - | 75 | - | ns |
| Reverse Recovery Current | Irr | - | 12 | - | A | |
| Reverse Recovery Charge | Qrr | - | 550 | - | nC | |
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