650 volt 40 amp trench field stop IGBT luxin semi AUGK40N65F1A1 suitable for power supplies and inverters
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The AUGK40N65F1A1 is a 650V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology, offering high-speed switching, excellent ruggedness with temperature stability, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT is ideal for Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Brand: LU-Semi
- Model: AUGK40N65F1A1
- Package: TO-263-2L
- Packaging: Tape and reel
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| VGE=0V , IC=250uA | ||||
| DC collector current | IC | 80 | A | TC = 25C |
| 40 | TC = 100C | |||
| Diode Forward current | IF | 80 | A | TC = 25C |
| 40 | TC = 100C | |||
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | tp 10usD |
| Turn off safe operating area | -120 | A | VCE 650V, Tj 175C, tp = 1s | |
| Pulse collector current | ICM | 120 | A | VGE =15V, tp limited by Tjmax |
| Diode Pulsed Current | IFpuls | 120 | A | tp limited by Tjmax |
| Power dissipation | Ptot | 188 | W | Tj=25C |
| Max Junction Temperature | Tjmax | 175 | C | |
| Operating junction temperature | Tj,op | -40...+150 | C | |
| Storage temperature | TS | -55...+150 | C | |
| Soldering temperature, wave soldering | 260 | C | 1.6mm (0.063in.) from case for 10s | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.90 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.60 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 62.5 | K/W | |
| Gate Threshold Voltage | VGE(th) | 4.0 / 5.0 / 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.80 / 2.40 | V | VGE=15V, IC=40A, Tj = 25C |
| 2.4 | Tj = 175C | |||
| Zero gate voltage collector current | ICES | 0.1 | A | VCE = 650V, VGE = 0V, Tj = 25C |
| 5000 | Tj = 175C | |||
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE = 20V, IC = 40A |
| Input capacitance | Cies | 2035 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 82 | pF | |
| Reverse transfer capacitance | Cres | 37 | pF | |
| Gate charge | QG | 93 | nC | VCC = 520V, IC = 40A, VGE = 15V |
| Turn-on Delay Time | td(on) | 37 | ns | Tj = 25C, VCC = 400V, IC =40.0A, VGE = 0.0/15.0V, Rg=15 |
| Rise Time | tr | 65 | ns | |
| Turn-off Delay Time | td(off) | 169 | ns | |
| Fall Time | tf | 43 | ns | |
| Turn-on Energy | Eon | 1.52 | mJ | |
| Turn-off Energy | Eoff | 0.88 | mJ | |
| Diode Forward Voltage | VFM | 2.0 | V | VGE=0V, IF = 40A |
| Reverse Recovery Time | Trr | 95 | ns | Tj = 25C, IF= 40A VR = 400V, di/dt =700A/s |
| Reverse Recovery Current | Irr | 16 | A | |
| Reverse Recovery Charge | Qrr | 0.64 | nC |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina