650V 60A Trench Field Stop IGBT Luxin-semi YGW60N65F1A1 Featuring Stable Temperature and Low VCEsat
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Product Description
Product Overview
The YGW60N65F1A1 is a 650V / 60A Trench Field Stop IGBT designed for high-speed switching applications. It offers improved reliability with high breakdown voltage, enhanced ruggedness, stable temperature performance, low VCEsat, and easy parallel switching capability due to its positive temperature coefficient in VCEsat. The device also features enhanced avalanche capability.
Product Attributes
- Brand: LU-Semi
- Model: YGW60N65F1A1
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | VGE=0V , IC=250uA |
| 650 | V | VGE=0V , IC=1mA | ||
| Gate Threshold Voltage | VGE(th) | 4.0 - 6.0 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.85 | V | VGE=15V, IC=60A, Tj = 25C |
| 2.55 | V | VGE=15V, IC=60A, Tj = 175C | ||
| Zero Gate Voltage Collector Current | ICES | 0.1 | A | VCE = 650V, VGE = 0V, Tj = 25C |
| 4000 | A | VCE = 650V, VGE = 0V, Tj = 175C | ||
| Gate-Emitter Leakage Current | IGES | 100 | nA | VCE = 0V, VGE =20V |
| Transconductance | gfs | 52 | S | VCE = 20V, IC = 60A |
| Input Capacitance | Cies | 3800 | pF | VCE = 30V, VGE = 0V, f = 1 MHz |
| Output Capacitance | Coes | 130 | pF | VCE = 30V, VGE = 0V, f = 1 MHz |
| Reverse Transfer Capacitance | Cres | 70 | pF | VCE = 30V, VGE = 0V, f = 1 MHz |
| Gate Charge | QG | 158 | nC | VCC = 520V, IC = 60A, VGE = 15V |
| Turn-on Delay Time | td(on) | 56 | ns | Tj=25C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12 |
| Rise Time | tr | 79 | ns | Tj=25C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-off Delay Time | td(off) | 165 | ns | Tj=25C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12 |
| Fall Time | tf | 81 | ns | Tj=25C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-on Energy | Eon | 2.2 | mJ | Tj=25C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12 |
| Turn-off Energy | Eoff | 0.89 | mJ | Tj=25C, VCC = 400V, IC = 60.0A, VGE = 0.0/15.0V, Rg=12 |
| Diode Forward Voltage | VFM | 2.3 | V | IF = 40A, Tj = 25C |
| Reverse Recovery Time | Trr | 90 | ns | IF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Current | Irr | 17 | A | IF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25C |
| Reverse Recovery Charge | Qrr | 900 | nC | IF= 40A, VR = 300V, di/dt= 600A/s, Tj = 25C |
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | - |
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | - |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | - |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | - |
| DC collector current, limited by Tjmax | IC | 60 | A | TC = 100C |
| Diode Forward current, limited by Tjmax | IF | 40 | A | TC = 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | - |
| Transient Gate-emitter voltage | VGE | 30 | V | - |
| Power dissipation , Tj=25C | Ptot | 312 | W | - |
| Operating junction temperature | Tj | -40...+175 | C | - |
| Storage temperature | TS | -55...+175 | C | - |
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