IGBT luxin-semi YGW40N65F1A2 650V 40A for high speed switching and operation in power conversion systems
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The YGW40N65F1A2 is a 650V / 40A Trench Field Stop IGBT designed for high-speed switching applications. It offers high breakdown voltage for improved reliability, enhanced ruggedness, temperature stability, and low VCEsat. Its positive temperature coefficient in VCEsat simplifies parallel switching. This IGBT is suitable for Uninterruptible Power Supplies, Inverters, Welding Converters, PFC applications, and converters with high switching frequencies.
Product Attributes
- Packaging: TO247 Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | Tj= 25 unless otherwise specified |
| DC collector current | IC | 80 / 40 | A | TC = 25C / TC = 100C |
| Diode Forward current | IF | 80 / 40 | A | TC = 25C / TC = 100C |
| Continuous Gate-emitter voltage | VGE | 20 | V | |
| Transient Gate-emitter voltage | VGE | 30 | V | |
| Pulse collector current | ICM | 120 | A | VGE =15V, tp limited by Tjmax |
| Power dissipation | Ptot | 188 | W | Tj=25C |
| Operating junction temperature | Tj | -40...+175 | C | |
| Storage temperature | TS | -55...+150 | C | |
| Soldering temperature, wave soldering | 260 | C | 1.6mm (0.063in.) from case for 10s | |
| Mounting torque, M3 screw | 0.6 | Nm | Maximum of mounting processes | |
| IGBT thermal resistance, junction - case | R(j-c) | 0.8 | K/W | |
| Diode thermal resistance, junction - case | R(j-c) | 1.3 | K/W | |
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |
| Static Collector-Emitter Breakdown Voltage | BVCES | 650 | V | VGE=0V , IC=250uA |
| Gate Threshold Voltage | VGE(th) | 4.0 / 4.9 / 5.6 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.80 / 2.60 / 2.40 | V | VGE=15V, IC=40A, Tj = 25C / Tj = 175C |
| Zero gate voltage collector current | ICES | 0.1 / 4000 | A | VCE = 650V, VGE = 0V, Tj = 25C / Tj = 175C |
| Gate-emitter leakage current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 20 | S | VCE = 20V, IC = 40A |
| Input capacitance | Cies | 2100 | pF | VCE = 30V, VGE = 0V, f = 1MHz |
| Output capacitance | Coes | 100 | pF | |
| Reverse transfer capacitance | Cres | 40 | pF | |
| Gate charge | QG | 90 | nC | VCC = 520V, IC = 40A, VGE = 15V |
| Turn-on Delay Time | td(on) | 45 | ns | Tj=25C, VCC = 400V, IC = 40.0A, VGE = 0.0/15.0V, Rg=20 |
| Rise Time | tr | 80 | ns | |
| Turn-off Delay Time | td(off) | 120 | ns | |
| Fall Time | tf | 75 | ns | |
| Turn-on Energy | Eon | 2.0 | mJ | |
| Turn-off Energy | Eoff | 0.4 | mJ | |
| Diode Forward Voltage | VFM | 1.95 / 2.45 | V | IF = 40A, Tj= 25 |
| Reverse Recovery Time | Trr | 50 | ns | IF= 40A, VR = 400V, di/dt= 400A/s |
| Reverse Recovery Current | Irr | 10 | A | |
| Reverse Recovery Charge | Qrr | 270 | nC |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina