NPN transistor luJing 2N5401 designed for high voltage switching and low current amplification tasks

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Product Description

Product Overview

The ON Semiconductor 2N540 is a general-purpose NPN transistor designed for switching and amplification in high-voltage applications. It features low current (max 200mA) and high voltage (max 150V) capabilities, making it suitable for applications such as telephony. The TO-92 plastic-encapsulated transistor can be mounted in any position.

Product Attributes

Brand: ON Semiconductor
Model: 2N540
Package: TO-92 Plastic-Encapsulate Transistors
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector Base Voltage	V_CBO				150	V
Collector Emitter Voltage	V_CEO				150	V
Emitter Base Voltage	V_EBO				6.0	V
Collector Current	I_C				200	mA
Collector Power Dissipation	P_C	@ T_A = 25C			625	mW
Thermal Resistance, Junction to Ambient	R_JA				200	C/W
Junction Temperature	T_j				150	C
Storage Temperature	T_stg		-65		+150	C
Collector Base Breakdown Voltage	V_BRCBO	I_C = 10 A, I_E = 0	150			V
Collector Emitter Breakdown Voltage	V_BRCEO	I_C = 10 mA, I_B = 0	150			V
Emitter Base Breakdown Voltage	V_BREBO	I_E = 10 A, I_C = 0	6.0			V
Collector Cutoff Current	I_CBO				10	nA
Emitter Cutoff Current	I_EBO	V_EB = 5 V, I_C = 0			10	nA
Collector Emitter Saturation Voltage	V_CE(sat)	I_C = 100 mA, I_B = 10 mA			1.0	V
Base Emitter Saturation Voltage	V_BE(sat)	I_C = 100 mA, I_B = 10 mA			1.2	V
Transition Frequency	f_T	V_CE = 10 V, I_C = 10 mA		100		MHz
DC Current Gain	h_FE	V_CE = 10 V, I_C = 10 mA		100
DC Current Gain	h_FE	V_CE = 10 V, I_C = 10 mA