High Voltage Transistors luJing MMBT5401 Pb Free SOT 23 Package Designed for Electronic Applications

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Product Description

Product Overview

High Voltage Transistors in Pb-Free Packages. These transistors are designed for high voltage applications and are available in Pb-Free packages.

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	VCBO	IC = -100 A, IE = 0	-160			V
Collector-emitter breakdown voltage *	VCEO	IC =- 1.0 mA, IB = 0	-150			V
Emitter-base breakdown voltage	VEBO	IE = -10 A, IC = 0	-5			V
Collector cutoff current	ICBO	VCB =- 120 V, IE = 0			-0.1	A
Emitter cutoff current	IEBO	VEB = -4.0 V, IC = 0			-0.1	A
DC current gain	hFE	IC = -1.0 mA, VCE = -5 V	80
		IC = -10 mA, VCE = -5 V		100	300
		IC = -50 mA, VCE = -5 V		50
Collector-emitter saturation voltage *	VCE(sat)	IC = -50 mA, IB = -5.0 mA		-0.5		V
Base-emitter saturation voltage *	VBE(sat)	IC = -50 mA, IB = -5.0 mA		-1.0		V
Transiston frequency	fT	VCE=-5V,IC=-10mA,f=30MHz	100			MHz

Parameter	Symbol	Rating	Unit
Collector-base voltage	VCBO	-160	V
Collector-emitter voltage	VCEO	-150	V
Emitter-base voltage	VEBO	-5	V
Collector current-continuous	IC	-0.6	A
Collector Power Dissipation	Pc	300	mW
Junction and storage temperature	TJ, Tstg	-55 to +150	C