Automotive switching diode LRC LMDL914T1G featuring 100 volt reverse breakdown voltage specification
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Product Description
High-Speed Switching Diode
The LMDL914T1G and S-LMDL914T1G are high-speed switching diodes designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These diodes comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S-prefix variant)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | LMDL914T1G | S-LMDL914T1G |
| Reverse Voltage | VR | 100 | Vdc | ✔ | ✔ | ||
| Forward Current | IF | 200 | mAdc | ✔ | ✔ | ||
| Peak Forward Surge Current | IFSM | 500 | mAdc | ✔ | ✔ | ||
| Reverse Breakdown Voltage | VBR | 100 | V | ✔ | ✔ | ||
| Reverse Voltage Leakage Current (@ VR = 20Vdc) | IR | 25 | nA✔ | ✔ | |||
| Reverse Voltage Leakage Current (@ VR = 75Vdc) | IR | 1 | µA | ✔ | ✔ | ||
| Diode Capacitance (@ VR = 0, f = 1.0 MHz) | CT | 4 | pF | ✔ | ✔ | ||
| Forward Voltage (@ IF = 10 mAdc) | VF | 0.5 | V | ✔ | ✔ | ||
| Reverse Recovery Time (@ IF = IR = 10 mAdc) | trr | 4 | ns | ✔ | ✔ | ||
| Total Device Dissipation (FR-4 Board @ TA = 25C) | PD | 635 | mW | ✔ | ✔ | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 157 | °C/W | ✔ | ✔ | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | °C | ✔ | ✔ |
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