load switch solution LRC LP4565T1G P Channel MOSFET with 60 Volt rating and trench technology design
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Delivery Time:
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Product Description
Product Overview
The Leshan Radio Company, LTD. P-Channel 60-V (D-S) MOSFET, specifically the LP4565T1G and LP4565 models, utilizes low RDS(on) trench technology for efficient performance. It features low thermal impedance and fast switching speeds, making it suitable for applications such as load switches, DC/DC conversion, and motor drives. This MOSFET is designed for reliability and performance in various industrial and electronic systems.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Technology: P-Channel, Trench Technology
- Voltage Rating: 60-V (Drain-to-Source)
- Package Type: SO-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C unless otherwise stated) | ||||||
| DraintoSource Voltage | VDSS | -60 | V | |||
| GatetoSource Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | ID | TA =25C | -20 | A | ||
| Continuous Drain Current (Note 1) | ID | TA =70C | -1.6 | A | ||
| Power Dissipation (Note 1) | PD | TA =25C | -7 | W | ||
| Power Dissipation (Note 1) | PD | TA =70C | -1.6 | W | ||
| Continuous Source Current (Diode Conduction)(Note 1) | IS | t10S Steady State | -2.9 | A | ||
| Pulsed Drain Current (Note 2) | IDM | -95 | A | |||
| Operating Junction and Storage Temperature Range | TJ , TSTG | -55 | +150 | C | ||
| Thermal Characteristics (Note 1) | ||||||
| Maximum Junction-to-Ambient | RJA | Surface Mounted on 1 x 1 FR4 Board | 45 | 95 | C/W | |
| Electrical Characteristics (Ta = 25C unless otherwise stated) | ||||||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250 uA | -1 | V | ||
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = 20 V | 10 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -48 V, VGS = 0 V | -1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -48 V, VGS = 0 V, TJ = 55C | -10 | uA | ||
| On-State Drain Current | ID(on) | VDS = -5 V, VGS = -10 V | -7.5 | A | ||
| Drain-Source On-Resistance | rDS(on) | VDS = -30 V, VGS = -10 V, ID = -4 A | 2.9 | m | ||
| Drain-Source On-Resistance | rDS(on) | VDS = -30 V, VGS = -4.5 V, ID = -4 A | 1.8 | m | ||
| Forward Transconductance | gfs | VDS = -15 V, ID = -4 A | 9 | S | ||
| Diode Forward Voltage | VSD | IS = -2.1 A, VGS = 0 V | -0.83 | V | ||
| Dynamic Characteristics (b. Guaranteed by design, not subject to production testing.) | ||||||
| Total Gate Charge | Qg | VDS = -30 V, RL = 7.5 , ID = -4 A, VGEN = -10 V, RGEN = 6 | 10 | nC | ||
| Gate-Source Charge | Qgs | 4.2 | nC | |||
| Gate-Drain Charge | Qgd | 3.1 | nC | |||
| Turn-On Delay Time | td(on) | 7 | ns | |||
| Rise Time | tr | 5 | ns | |||
| Turn-Off Delay Time | td(off) | 37 | ns | |||
| Fall Time | tf | 14 | ns | |||
| Input Capacitance | Ciss | VDS = -15 V, VGS = 0 V, f = 1 Mhz | 1146 | pF | ||
| Output Capacitance | Coss | 84 | pF | |||
| Reverse Transfer Capacitance | Crss | 60 | pF | |||
| Ordering Information | Device Marking | Shipping | ||||
| LP4565T1G | 4000/Tape&Reel | |||||
| LP4565DT1AG | ||||||
| Outline and Dimensions | ||||||
| Dimension | Symbol | MIN | NOM | MAX | Unit | |
| A | 1.75 | mm | ||||
| A1 | 0.10 | 0.15 | 0.20 | mm | ||
| A2 | 1.35 | 1.45 | 1.55 | mm | ||
| b | 0.33 | 0.42 | 0.51 | mm | ||
| c | 0.15 | 0.22 | 0.29 | mm | ||
| D | 4.77 | 4.90 | 5.03 | mm | ||
| E | 5.80 | 6.00 | 6.20 | mm | ||
| E1 | 3.80 | 3.90 | 4.00 | mm | ||
| e | 1.27BSC | mm | ||||
| L | 0.46 | 0.66 | 0.86 | mm | ||
| L1 | 0.85 | 1.05 | 1.25 | mm | ||
| 0 | 5 | 8 | ||||
| B | 0.55 | |||||
| H | 0 | 0.05 | 0.10 | mm | ||
| Soldering Footprint SOP8 | ||||||
| Dimension | (mm) | X | Y | C1 | C2 | |
| 0.60 | 1.55 | 5.40 | 1.27 | |||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina