Parallel switching capable 1200V 40A trench stop IGBT luxin-semi YGW40N120T3 for frequency converter
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Product Description
Product Overview
The YGW40N120T3 is a 1200V, 40A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, stable temperature behavior, and a short circuit withstand time of 10s. The device offers low VCE(SAT) and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). It also boasts enhanced avalanche capability, making it suitable for demanding applications like frequency converters and motor drives.
Product Attributes
- Brand: LU-Semi
- Product Code: YGW40N120T3
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 1200 | V | - |
| DC Collector Current | IC | 40 | A | TC = 100C |
| Diode Forward Current | IF | 40 | A | TC = 100C |
| Continuous Gate-Emitter Voltage | VGE | 20 | V | - |
| Short Circuit Withstand Time | Tsc | 10 | s | VGE=15V, VCE600V |
| Power Dissipation | Ptot | 416 | W | Tj=25C |
| Operating Junction Temperature | Tj | -40...+150 | C | - |
| Storage Temperature | Ts | -55...+150 | C | - |
| IGBT Thermal Resistance (Junction-Case) | R(j-c) | 0.3 | K/W | - |
| Diode Thermal Resistance (Junction-Case) | R(j-c) | 0.6 | K/W | - |
| Thermal Resistance (Junction-Ambient) | R(j-a) | 40 | K/W | - |
| Gate Threshold Voltage | VGE(th) | 5.9 | V | VGE=VCE, IC=250A (Typ.) |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.75 | V | IC=40A, Tj = 25C (Typ.) |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.35 | V | IC=40A, Tj = 150C (Typ.) |
| Zero Gate Voltage Collector Current | ICES | 250 | A | VCE = 1200V, VGE = 0V, Tj = 25C (Typ.) |
| Zero Gate Voltage Collector Current | ICES | 2500 | A | VCE = 1200V, VGE = 0V, Tj = 150C (Typ.) |
| Gate-Emitter Leakage Current | IGES | 100 | nA | VCE = 0V, VGE = 20V (Typ.) |
| Transconductance | gfs | 15 | S | VCE=20V, IC=15A (Typ.) |
| Input Capacitance | Cies | 6100 | pF | VCE = 25V, VGE = 0V, f = 1MHz (Typ.) |
| Output Capacitance | Coes | 190 | pF | VCE = 25V, VGE = 0V, f = 1MHz (Typ.) |
| Reverse Transfer Capacitance | Cres | 100 | pF | VCE = 25V, VGE = 0V, f = 1MHz (Typ.) |
| Gate Charge | QG | 260 | nC | VCC = 960V, IC = 40A, VGE = 15V (Typ.) |
| Turn-on Delay Time | td(on) | 80 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10 (Typ.) |
| Rise Time | tr | 50 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10 (Typ.) |
| Turn-on Energy | Eon | 4.8 | mJ | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10 (Typ.) |
| Turn-off Delay Time | td(off) | 180 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10 (Typ.) |
| Fall Time | tf | 80 | ns | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10 (Typ.) |
| Turn-off Energy | Eoff | 1.65 | mJ | VCC = 600V, IC = 40A, VGE = 0/15V, Rg=10 (Typ.) |
| Diode Forward Voltage | VFM | 1.8 | V | IF = 40A (Typ.) |
| Reverse Recovery Time | Trr | 350 | ns | IF= 40A, VR = 600V, di/dt= 600A/s (Typ.) |
| Reverse Recovery Current | Irr | 15 | A | IF= 40A, VR = 600V, di/dt= 600A/s (Typ.) |
| Reverse Recovery Charge | Qrr | 2.5 | C | IF= 40A, VR = 600V, di/dt= 600A/s (Typ.) |
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