TO247 Package IGBT luxin-semi YGW20N65T2 650V 20A designed for soft switching and air conditioning motor drive inverter
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Product Description
Product Overview
The YGF20N65T2, YGK20N65T2, YGP20N65T2, and YGW20N65T2 are 650V / 20A Trench Field Stop IGBTs designed for high-reliability applications. These devices feature a maximum junction temperature of 175C, high breakdown voltage, short circuit rating, and very low saturation voltage (1.65V Typ. @ 20A). They are suitable for soft switching applications, air conditioning, and motor drive inverters.
Product Attributes
- Brand: LU-Semi
- Origin: China (implied by website domain)
- Date: 2021.04 / Rev1.1
Technical Specifications
| Model | Package | VCE (V) | IC (A) | VCE(SAT) @ IC=20A (V) | Max Junction Temperature (C) | Short Circuit Rated | Applications |
| YGF20N65T2 | TO-220F | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Soft switching, Air conditioning, Motor drive inverter |
| YGK20N65T2 | TO-263 | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Soft switching, Air conditioning, Motor drive inverter |
| YGP20N65T2 | TO-220 | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Soft switching, Air conditioning, Motor drive inverter |
| YGW20N65T2 | TO247 | 650 | 20 | 1.65 (Typ.) | 175 | Yes | Soft switching, Air conditioning, Motor drive inverter |
| Parameter | Symbol | TO-220F | TO-220,TO-263 | TO247 | Unit |
| IGBT thermal resistance, junction - case | R(j-c) | 4.9 | 1.2 | 1.05 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | 5.8 | 2.38 | 1.7 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | 62.5 | 40 | - | K/W |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0V, IC = 1mA | 650 | - | - | V |
| Collector to Emitter Saturation Voltage | VCE(SAT) | IC = 20A, VGE = 15V | - | 1.65 | 2.05 | V |
| G-E Threshold Voltage | VGE(th) | VGE = VCE, IC = 250A | 4.4 | 5.4 | 6.4 | V |
| Collector Cut-Off Current | ICES | VCE = 650V, VGE = 0V | - | - | 40 | A |
| G-E Leakage Current | IGES | VGE = 20V, VCE = 0V | - | - | 200 | nA |
| Transconductance | gfs | VCE=20V, IC=15A | - | 10 | - | S |
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1050 | - | pF |
| Output capacitance | Coes | - | - | 50 | - | pF |
| Reverse transfer capacitance | Cres | - | - | 20 | - | pF |
| Gate charge | QG | VCC = 520V, IC = 20A, VGE = 15V | - | 45 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us VCC=400V, Tjstart=25C | - | 150 | - | A |
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 20A, VGE = 0/15V, Rg=20 | - | 20 | - | ns |
| Rise Time | tr | - | - | 40 | - | ns |
| Turn-off Delay Time | td(off) | - | - | 60 | - | ns |
| Fall Time | tf | - | - | 75 | - | ns |
| Turn-on Energy | Eon | - | - | 0.47 | - | mJ |
| Turn-off Energy | Eoff | - | - | 0.10 | - | mJ |
| Diode Forward Voltage | VFM | IF = 20A | - | 1.9 | - | V |
| Reverse Recovery Time | Trr | IF= 15A VR = 300V, di/dt =200A/s | - | 50 | - | ns |
| Reverse Recovery Current | Irr | - | - | 4 | - | A |
| Reverse Recovery Charge | Qrr | - | - | 83 | - | nC |
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